All-around contact for carbon nanotube field-effect transistors made by ac dielectrophoresis

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 1, 2006, Pages 131-135

  Zhang, Zhi Bin ^a   Zhang, Shi Li ^a   Campbell, Eleanor E B ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b UNIVERSITY OF GOTHENBURG   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; ELECTRODES; ELECTROPHORESIS; PALLADIUM; PROBES; RESISTORS;

CARBON NANOTUBE RESISTORS (CNR); DIELECTROPHORESIS; GATE MODULATION;

FIELD EFFECT TRANSISTORS;

EID: 31544443008     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2150226     Document Type: Article

References (18)

1. Carbon Nanotubes, edited by, M. S. Dresselhaus, G. Dresselhaus, and, Ph. Avouris, (Springer, Berlin, 2001).
2. P. L. McEuen, M. Fuhrer, and H. Park, J. Hist. Astron. 1, 78 (2002).
3. Ph. Avouris, J. Appenzeller, R. Martel, and S. J. Wind, Proc. IEEE 91, 1772 (2003).
4. S. Tan, A. Verschueren, and C. Dekker, Nature (London) 393, 49 (1998).
5. P. McEuen and J. -Y. Park, MRS Bull. 29, 272, (2004).
6. H. T. Soh, C. F. Quate, A. F. Morpurgo, C. M. Marcus, J. Kong, and H. Dai, Appl. Phys. Lett. 75, 627 (1999).
7. R. Krupke, F. Hennrich, H. B. Weber, M. M. Kappes, and H. V. Löhneysen, Nano Lett. 3, 1019 (2003).
8. R. Krupke, F. Hennrich, H. B. Weber, D. Beckmann, O. Hampe, S. Malik, M. M. Kappes, and H. V. Löhneysen, Appl. Phys. A 76, 397 (2003).
9. S. W. Lee, D. S. Lee, H. Y. Yu, E. E. B. Campbell, and Y. W. Park, Appl. Phys. A 78, 283 (2004).
10. Z. -B. Zhang, X. -J. Liu, E. E. B. Campbell, and S. -L. Zhang, J. Appl. Phys. 98, 056103 (2005).
11. T. W. Tombler, C. Zhou, L. Alexseyev, J. Kong, H. Dai, L. Liu, C. S. Jayanthl, M. Tang, and S. Wu, Nature (London) 405, 769 (2000).
12. M. P. Anantram, S. Data, and Y. Xue, Phys. Rev. B 61, 14219 (2000).
13. D. Mann, A. Javey, J. Kong, Q. Wang, and H. Dai, Nano Lett. 3, 1541 (2003).
14. Z. -B. Zhang, J. Cardenas, E. E. B. Campbell, and S. -L. Zhang, Appl. Phys. Lett. 87, 43110 (2005).
15. H. Stahl, J. Appenzeller, R. Martel, Ph. Avouris, and B. Lengeler, Phys. Rev. Lett. 85, 5186 (2000).
16. A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. Dai, Nature (London) 424, 654 (2003).
17. J. Appenzeller, J. Knoch, V. Derycke, R. Martel, S. Wind, and Ph. Avouris, Phys. Rev. Lett. 89, 126801 (2002).
18. S. M. Sze, Semiconductor Devices, Physics, and Technology (Wiley, New York, 1985).