Low-frequency noise in top-gated ambipolar carbon nanotube field effect transistors

Applied Physics Letters

Volumn 92, Issue 22, 2008, Pages

  Xu, Guangyu ^a   Liu, Fei ^b   Han, Song ^a   Ryu, Koungmin ^c   Badmaev, Alexander ^c   Lei, Bo ^c   Zhou, Chongwu ^c   Wang, Kang L ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c University of Southern California ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CARBON NANOTUBES; ELECTRON EMISSION; HEAT CONDUCTION; MESFET DEVICES; NANOCOMPOSITES; NANOPORES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; NANOTUBES; OXIDE MINERALS; PHOTOACOUSTIC EFFECT; QUARTZ; SCHOTTKY BARRIER DIODES; THERMAL NOISE; TRANSISTORS;

AMBIPOLAR; AMERICAN INSTITUTE OF PHYSICS (AIP); BACK GATED DEVICES; CARBON NANOTUBE FIELD-EFFECT TRANSISTORS (CNTFET); IN-VACUUM; LOW FREQUENCY NOISE (1/F NOISE); QUARTZ SUBSTRATES; SCHOTTKY BARRIER (SB); VALANCE BAND (VB);

FIELD EFFECT TRANSISTORS;

EID: 44849133414     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2940590     Document Type: Article

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