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Journal of Applied Physics

Volumn 104, Issue 12, 2008, Pages

Nonvolatile multilevel memory effect by resistive switching in manganite thin films

(2) Lau, H K a Leung, C W a

a HONG KONG POLYTECHNIC UNIVERSITY (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE EQUIPMENT; MANGANESE; MANGANESE COMPOUNDS; OXIDE MINERALS; SWITCHING SYSTEMS;

GOLD ELECTRODES; INTERMEDIATE RESISTANCES; MANGANITE THIN FILMS; MULTIBIT; MULTILEVEL MEMORIES; NON VOLATILES; RESISTIVE SWITCHING; SPECIFIC VOLTAGES; SWITCHING CYCLES;

SWITCHING;

EID: 58149242283 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3043801 Document Type: Article

Times cited : (27)

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