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Volumn 20, Issue 3, 2009, Pages

Enhanced light collection of GaN light emitting devices by redirecting the lateral emission using nanorod reflectors

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ALLOYS; GALLIUM NITRIDE; GUIDED ELECTROMAGNETIC WAVE PROPAGATION; LIGHT EMISSION; LIGHT EMITTING DIODES; ORGANIC LIGHT EMITTING DIODES (OLED); PHYSICAL OPTICS; REFLECTION; SEMICONDUCTING GALLIUM;

EID: 58149236803     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/3/035202     Document Type: Article
Times cited : (28)

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    • Huh C, Lee K S, Kang E J and Park S J 2003 Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface J. Appl. Phys. 93 9383
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    • Pan S M, Tu R C, Fan Y M, Yeh R C and Hsu J T 2003 Improvement of InGaN-GaN light-emitting diodes with surface-textured indium-tin-oxide transparent ohmic contacts IEEE Electron Device Lett. 15 649
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    • Horng R H, Huang S H, Yang C C and Wuu D S 2006 Efficiency improvement of GaN-Based LEDs with ITO texturing window layers using natural lithography IEEE J. Quantum Electron. 12 1196
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.