Bulge testing and fracture properties of plasma-enhanced chemical vapor deposited silicon nitride thin films

Thin Solid Films

Volumn 517, Issue 6, 2009, Pages 1989-1994

  Zhou, Wei ^a,b   Yang, Jinling ^a,b   Li, Yan ^a   Ji, An ^a   Yang, Fuhua ^a   Yu, Yude ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b STATE KEY LABORATORY OF TRANSDUCER TECHNOLOGY   (China)

Author keywords

Bulge test; Fracture property; Silicon nitride; Weibull distribution function

Indexed keywords

BRITTLENESS; CHEMICAL PROPERTIES; DISTRIBUTION FUNCTIONS; FRACTURE TESTING; FUNCTIONS; INTEGRATION; LOAD TESTING; MATHEMATICAL MODELS; MECHANICAL PROPERTIES; NITRIDES; NONMETALS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; PLASTIC DEFORMATION; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON COMPOUNDS; SILICON NITRIDE; SOLIDS; STRESSES; SUBSTRATES; THIN FILM DEVICES; THIN FILMS; VAPORS; WEIBULL DISTRIBUTION;

AND MODELS; BULGE TEST; CHEMICAL VAPOR DEPOSITED; DEFLECTION MODELS; EDGE FLAWS; EDGE INTEGRATIONS; FRACTURE BEHAVIORS; FRACTURE ORIGINS; FRACTURE PROPERTY; FRACTURE STRENGTHS; LOCAL STRESSES; RECTANGULAR MEMBRANES; REFERENCE STRESSES; SI SUBSTRATES; SILICON NITRIDE THIN FILMS; WEIBULL DISTRIBUTION FUNCTION;

FRACTURE;

EID: 58149084194     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.10.042     Document Type: Article

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