Far-infrared characteristics of bulk and nanostructured wide-bandgap semiconductors

Journal of Nanoelectronics and Optoelectronics

Volumn 2, Issue 3, 2007, Pages 222-233

  Han, Jiaguang ^a   Azad, Abul K ^a   Zhang, Weili ^a  

^a Oklahoma State University   (United States)

Author keywords

Bulk; Nanostructures; Phonons; Teraherts time domain spectroscopy; Wide bandgap semiconductors

Indexed keywords

CRYSTALLINE MATERIALS; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; ENERGY GAP; FREQUENCY RESPONSE; GALLIUM ALLOYS; GALLIUM NITRIDE; NANOSTRUCTURES; PHONONS; REFLECTOMETERS; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; TIME DOMAIN ANALYSIS; ZINC OXIDE; ZINC SULFIDE;

BROADBAND TERAHERTZ; BULK; BULK CRYSTALLINE; DIELECTRIC MODELS; DIELECTRIC RESPONSES; EFFECTIVE MEDIUM MODELS; INFRARED PROPERTIES; MEASURED RESULTS; NANOSTRUCTURED; OPTICAL-; PHONON CONFINEMENTS; PHONON RESONANCES; PHOTON RESPONSES; SPECTROSCOPY MEASUREMENTS; TERAHERTS TIME-DOMAIN SPECTROSCOPY; TERAHERTZ; TERAHERTZ OPTOELECTRONICS; TERAHERTZ REGIONS; TRANSVERSE OPTICAL PHONONS; WIDE-BANDGAP SEMICONDUCTORS; ZNO TETRAPODS; ZNS NANOPARTICLES;

SEMICONDUCTOR MATERIALS;

EID: 58049198209     PISSN: None     EISSN: None     Source Type: Journal    
DOI: 10.1166/jno.2007.302     Document Type: Review

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