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Volumn 44, Issue 2, 2005, Pages 926-931
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Measurement of electrical properties of GaN thin films using terahertz-time domain spectroscopy
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Author keywords
Electrical properties; Spectroscopy; Thin film; THz
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Indexed keywords
CARRIER CONCENTRATION;
CARRIER MOBILITY;
ELECTRIC CONDUCTIVITY;
HIGH ELECTRON MOBILITY TRANSISTORS;
SAPPHIRE;
SEMICONDUCTOR DOPING;
SPECTROSCOPIC ANALYSIS;
THIN FILMS;
ELECTRICAL PROPERTIES;
FREE CARRIERS;
THZ;
TIME DOMAIN SPECTROSCOPY;
GALLIUM NITRIDE;
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EID: 17444410020
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.44.926 Document Type: Article |
Times cited : (25)
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References (16)
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