Low-threshold current density InAs quantum dash lasers on InP (100) grown by molecular beam epitaxy

Electronics Letters

Volumn 45, Issue 1, 2009, Pages 50-51

  Zhou, D ^a,b   Piron, R ^a   Dontabactouny, M ^a   Dehaese, O ^a   Grillot, F ^a   Batte, T ^a   Tavernier, K ^a   Even, J ^a   Loualiche, S ^a  

^a UNIVERSITÉ DE RENNES 1   (France)

^b NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; INDIUM ARSENIDE; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING INDIUM; THRESHOLD CURRENT DENSITY;

CARRIER LEAKAGES; CAVITY LENGTHS; CHARACTERISTIC TEMPERATURES; INHOMOGENEOUS BROADENING; LASER STRUCTURES; QUANTUM DASHES; ROOM TEMPERATURES;

LASERS;

EID: 58049128970     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20093066     Document Type: Article

References (10)

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