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Volumn , Issue , 2008, Pages 290-293

A dual port dual width 90nm SRAM with guaranteed data retention at minimal standby supply voltage

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIES; PORTS AND HARBORS; STATIC RANDOM ACCESS STORAGE;

EID: 58049121594     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSCIRC.2008.4681849     Document Type: Conference Paper
Times cited : (3)

References (11)
  • 1
    • 28044459816 scopus 로고    scopus 로고
    • A small granular controlled leakage reduction system for SRAMs
    • November
    • P. Geens, W. Dehaene, "A small granular controlled leakage reduction system for SRAMs", Journal of Solid-State Electronics, no. 49, November 2005, pp 1776-1782
    • (2005) Journal of Solid-State Electronics , Issue.49 , pp. 1776-1782
    • Geens, P.1    Dehaene, W.2
  • 3
  • 5
    • 33646864552 scopus 로고    scopus 로고
    • Leakage Current Mechanisms and Leakage Reduction Techniques in Deep-Submicrometer CMOS Circuits
    • February
    • K. Roy, S. Mukhopadhyay, H. Mahmoodi-Meimand, "Leakage Current Mechanisms and Leakage Reduction Techniques in Deep-Submicrometer CMOS Circuits", IEEE Proceedings of the IEEE, vol 91, no. 2, February 2003, pp. 305-327
    • (2003) IEEE Proceedings of the IEEE , vol.91 , Issue.2 , pp. 305-327
    • Roy, K.1    Mukhopadhyay, S.2    Mahmoodi-Meimand, H.3
  • 6
    • 0347528892 scopus 로고    scopus 로고
    • Ultralow-power SRAM technology
    • September/November
    • R.W. Mann et al., "Ultralow-power SRAM technology", IBM Journal on Research & Development, VOL.47, NO. 5/6, September/November 2003
    • (2003) IBM Journal on Research & Development , vol.47 , Issue.5-6
    • Mann, R.W.1
  • 7
    • 0003476558 scopus 로고    scopus 로고
    • CMOS, Circuit Design, Layout and Simulation
    • Piscat-away, NJ: IEEEPress, ch. 26, pp
    • J. R. Baker, H. W. Li, and D. E. Boyce, CMOS, Circuit Design, Layout and Simulation, Ser. Series on Microelectronics., Piscat-away, NJ: IEEEPress, 1998, ch. 26, pp. 685-717.
    • (1998) Ser. Series on Microelectronics , pp. 685-717
    • Baker, J.R.1    Li, H.W.2    Boyce, D.E.3
  • 9
    • 50249185641 scopus 로고    scopus 로고
    • A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging
    • K. Mistry et al., "A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging", Proceedings of IEEE International Electron Devices Meeting, 2007, pp. 247-250
    • (2007) Proceedings of IEEE International Electron Devices Meeting , pp. 247-250
    • Mistry, K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.