Reduction of the dark-current in carbon nanotube photo-detectors

ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference

Volumn , Issue , 2008, Pages 214-217

  Pourfath, M ^a   Kosina, H ^a   Selberherr, S ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFERENTIAL EQUATIONS; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GREEN'S FUNCTION; NANOCOMPOSITES; NANOTUBES; PHOTODETECTORS; SEMICONDUCTOR MATERIALS; TRANSISTORS;

CURRENT LIMITS; DOUBLE GATE STRUCTURES; ELECTRONIC APPLICATIONS; TUN ABILITIES;

CARBON NANOTUBES;

EID: 58049091953     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2008.4681736     Document Type: Conference Paper

References (17)

1. J. Appenzeller, M. Radosavljevic, J. Knoch, and P. Avouris, "Tunneling Versus Thermionic Emission in One-Dimensional Semiconductors," Phys. Rev. Lett., vol. 92, p. 048301, 2004.
2. A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. Dai, "Ballistic Carbon Nanotube Field-Effect Transistors," Nature (London), vol. 424, no. 6949, pp. 654-657, 2003.
3. J.-Y. Park, "Carbon Nanotube Field-Effect Transistor with a Carbon Nanotube Gate Electrode," Nanotechnology, vol. 18, no. 9, p. 095202, 2007.
4. M. Freitag, J. Chen, J. Tersoff, J. Tsang, Q. Fu, J. Liu, and P. Avouris, "Mobile Ambipolar Domain in Carbon-Nanotube Infrared Emitters," Phys. Rev. Lett., vol. 93, p. 076803, 2004.
5. M. Freitag, Y. Martin, I. Misewich, R. Martel, and P. Avouris, "Photoconductivity of Single Carbon Nanotubes," Nano Lett, vol. 3, no. 8, pp. 1067-1071, 2003.
6. S. Lu and B. Panchapakesan, "Photoconductivity in Single Wall Carbon Nanotube Sheets," Nanotechnology, vol. 17, no. 8, pp. 1843-1850, 2006.
7. I. Zhang, N. Xi, Ft. Chan, and G. Li, "Single Carbon Nanotube Based Infrared Sensor," Proc. SPIE, vol. 6395, p. 63950A, 2006.
8. I. Guo, S. Datta, M. Lundstrom, and M. Anantram, "Multi-Scale Modeling of Carbon Nanotube Transistors," Intl. J. Multiscale Comput. Eng., vol. 2, no. 2, pp. 257-278, 2004.
9. A. Svizhenko and M. Anantram, "Effect of Scattering and Contacts on Current and Electrostatics in Carbon Nanotubes," Phys. Rev. B, vol. 72, p. 085430, 2005.
10. M. Pourfath, Ft. Kosina, and S. Selberherr, "Rigorous Modeling of Carbon Nanotube Transistors," IOP J. Phys.: Conf. Sen, vol. 38, pp. 29-32, 2006.
11. M. Pourfath and Ft. Kosina, "The Effect of Phonon Scattering on the Switching Response of Carbon Nanotube FETs," Nanotechnology, vol. 18, pp. 424036-6, 2007.
12. M. Pourfath, A. Gehring, E. Ungersboeck, Ft. Kosina, S. Selberherr, B.-H. Cheong, and W. Park, "Separated Carrier Injection Control in Carbon Nanotube Field-Effect Transistors," J. Appl. Phys., vol. 97, no. 10, pp. 106103-3, 2005.
13. R. Venugopal, Z. Ren, S. Datta, M. Lundstrom, and D. Jovanovic, "Simulating Quantum Transport in Nanoscale Transistors: Real Versus Mode-Space Approaches," J. Appl. Phys., vol. 92, no. 7, pp. 3730-3739, 2002.
14. E. Lindor and E. Henrickson, "Nonequilibrium Photocurrent Modeling in Resonant Tunneling Photodetectors," J. Appl. Phys., vol. 91, no. 10, pp. 6273-6281, 2002.
15. D. A. Stewart and F. Leonard, "Photocurrents in Nanotube Junctions," Phys. Rev. Lett, vol. 93, no. 10, p. 107401, 2004.
16. R. Lake, G. Klimeck, R. C. Bowen, and D. Jovanovic, "Single and Multiband Modeling of Quantum Electron Transport Through Layered Semiconductor Devices," J. Appl. Phys., vol. 81, no. 12, pp. 7845-7869, 1997.
17. M. Pourfath and Ft. Kosina, "A Fast and Stable Poisson- Schrödinger Solver for the Analysis of Carbon Nanotube Transistors," J. Comp. Electronics, vol. 5, no. 2-3, pp. 155-159, 2006.