Insights into gate-underlap design in double gate based 6-T SRAM cell for low voltage applications

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2008, Pages 61-62

  Rashmi, Abhinav Kranti ^a   Armstrong, G Alastair ^a  

^a QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 57749195115     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2008.4656294     Document Type: Conference Paper

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