Effect of the binuclear Cu(II) complex interface layer on the calculation of electronic properties of Au/Cu(II) complex/n-Si organic-inorganic hybrid heterojunction

Synthetic Metals

Volumn 158, Issue 21-24, 2008, Pages 969-972

  Akkilic K ^a   Ocak, Y S ^a   Ilhan, S ^b   Kilicoglu T ^a  

^a DICLE UNIVERSITY   (Turkey)

^b SIIRT UNIVERSITY   (Turkey)

Author keywords

Binuclear Cu(II) complex; Organic inorganic semiconductor contact; Schottky diode

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DISTILLATION; ELECTRIC CONDUCTIVITY; ELECTRONIC PROPERTIES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SILICON; SILICON WAFERS;

BARRIER HEIGHTS; BINUCLEAR CU(II) COMPLEX; ENERGY DISTRIBUTIONS; IDEALITY FACTORS; INORGANIC HYBRIDS; INTERFACE STATES; MACROCYCLIC; ORGANIC-INORGANIC SEMICONDUCTOR CONTACT; RECTIFYING BEHAVIORS; ROOM TEMPERATURES; SCHOTTKY DIODE; SEMICONDUCTOR BAND GAPS;

COPPER;

EID: 57649184334     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2008.06.018     Document Type: Article

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