Electrically driven single InGaN/GaN quantum dot emission

Applied Physics Letters

Volumn 93, Issue 23, 2008, Pages

  Jarjour, Anas F ^a   Taylor, Robert A ^a   Oliver, Rachel A ^b   Kappers, Menno J ^b   Humphreys, Colin J ^b   Tahraoui, Abbes ^b,c  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; NITRIDES; OPTICAL WAVEGUIDES; QUANTUM ELECTRONICS;

CHARGE ACCUMULATIONS; ELECTRICAL BISTABILITIES; ELECTRICAL PROPERTIES; EMISSION PROPERTIES; INGAN/GAN; ON CURRENTS; QUANTUM DOT EMISSIONS; QUANTUM DOT LAYERS; QUANTUM DOTS; SINGLE QUANTUM DOTS; VOLTAGE CHARACTERISTICS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 57649129330     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3044395     Document Type: Article

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