Corrigendum to: "High-quality InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy" [Superlatt. Microstruct. 40 (2006) 214-218] (DOI:10.1016/j.spmi.2006.09.015)

Superlattices and Microstructures

Volumn 44, Issue 3, 2008, Pages 302-

  Hiroki, M ^a   Yokoyama, H ^a   Watanabe, N ^a   Kobayashi, T ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 49149100970     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2008.06.004     Document Type: Erratum

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