A specimen-drift-free EDX mapping system in a STEM for observing two-dimensional profiles of low dose elements in fine semiconductor devices

Journal of Electron Microscopy

Volumn 51, Issue 3, 2002, Pages 167-171

  Tsuneta, Ruriko ^a   Koguchi, Masanari ^a   Nakamura, Kuniyasu ^a   Nishida, Akio ^a  

^a HITACHI LTD   (Japan)

Author keywords

Arsenic; EDX; Phase correlation; Specimen drift; STEM

Indexed keywords

ARTICLE;

FREE ENERGY; IMAGE ENHANCEMENT; IMAGE RESOLUTION; SEMICONDUCTOR DEVICES; TRANSMISSION ELECTRON MICROSCOPY;

DRIFT-FREE; ELEMENTAL MAPPING; ENERGY-DISPERSIVE X-RAYS; LOW DOSE; MAPPING SYSTEMS; PHASE CORRELATION; SCANNING TRANSMISSION ELECTRON MICROSCOPES; SPATIAL RESOLUTION; SPECIMEN DRIFT; X-RAY MAPPING;

MAPPING;

EID: 0036280717     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/jmicro/51.3.167     Document Type: Article

References (8)

1. Arsenic dopant profiling around trench capacitors in a memory chip using EDX in a field-emission TEM/STEM
2. Digital X-ray imaging of small particles
3. X-ray elemental mapping using 300-kv field emission TEM
4. Drift corrected magnification EDS high mapping
5. High-resolution nano area analysis of plate like precipitate in aluminum alloy employed with Z-contrast and drift correction EDS mapping
6. Atomic-level detection by X-ray microanalysis in the analytical electron microscope