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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 3, 2004, Pages 1076-1080

Structure of an oxygen-related defect complex in SiC studied with electron energy-loss spectroscopy

(4) Muto, Shunsuke a Sugiyama, Hiroshi a Kimura, Tomohiko a Tanabe, Tetsuo a

a NAGOYA UNIVERSITY (Japan)

Author keywords

Carbon vacancy; Electron energy loss spectroscopy; Extended energy loss fine structure; Oxygen; Silicon carbide

Indexed keywords

CRYSTALS; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISSIPATION; LATTICE CONSTANTS; OXYGEN; POINT DEFECTS; SYNCHROTRON RADIATION; TRANSMISSION ELECTRON MICROSCOPY;

CARBON VACANCY; EXTENDED ENERGY-LOSS FINE STRUCTURE; LIGHT ELEMENT IMPURITIES; SYNCHROTRON ORBITAL RADIATION;

SILICON CARBIDE;

EID: 2442693285 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.1076 Document Type: Article

Times cited : (11)

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