Optical and electrical step-recovery study of minority-carrier transport in an InGaN/GaN quantum-well light-emitting diode grown on sapphire

Applied Physics Letters

Volumn 85, Issue 22, 2004, Pages 5436-5438

  Kaplar, R J ^a   Kurtz, S R ^a   Koleske, D D ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL DECAYS; EMISSION PROCESSES; HOLE TRANSPORT; MINORITY CARRIERS;

CHARGE CARRIERS; DIFFUSION; GALLIUM NITRIDE; MODULATION; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS; TRANSPORT PROPERTIES;

LIGHT EMITTING DIODES;

EID: 11044222265     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1828229     Document Type: Article

References (11)

1. S. F. Chichibu, T. Azuhata, T. Sota, T. Mukai, and S. Nakamura, J. Appl. Phys. 88, 5153 (2000).
2. W. Shan, X. C. Xie, J. J. Song, and B. Goldenberg, Appl. Phys. Lett. 67, 2512 (1995).
3. J. C. Carrano, T. Li, D. L. Brown, P. A. Grudowski, C. J. Eiting, R. D. Dupuis, and J. C. Campbell, Appl. Phys. Lett. 73, 2405 (1998).
4. J. M. van Hove, R. Hickman, J. J. Klaassen, P. P. Chow, and P. P. Ruden, Appl. Phys. Lett. 70, 2282 (1997).
5. L. Chernyak, A. Osinsky, H. Temkin, J. W. Yang, Q. Chen, and M. A. Khan, Appl. Phys. Lett. 69, 2531 (1996).
6. Z. Z. Bandic, P. M. Bridger, E. C. Piquette, and T. C. McGill, Solid-State Electron. 44, 221 (2000).
7. R. J. Kaplar, S. R. Kurtz, D. D. Koleske, and A. J. Fischer, J. Appl. Phys. 95, 4905 (2004).
8. R. H. Dean and C. J. Nuese, IEEE Trans. Electron Devices ED-18, 151 (1971).
9. H. Kingston, Proc. IRE 42, 829 (1954).
10. L. Chernyak, A. Osinsky, and A. Schulte, Solid-Slate Electron. 45, 1687 (2001) and references therein.
11. J. W. P. Hsu, F. F. Schrey, and H. M. Ng, Appl. Phys. Lett. 83, 4172 (2003).