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Volumn 6923, Issue , 2008, Pages

Formation mechanism of 193nm immersion defects and defect reduction strategies

Author keywords

193nm immersion lithography; Defectivity; Process; Resist and topcoat

Indexed keywords

193NM IMMERSION LITHOGRAPHY; 193NM IMMERSIONS; DEFECT REDUCTIONS; DEFECTIVITY; FORMATION MECHANISMS; RESIST AND TOPCOAT; SIMULATION RESULTS;

EID: 57349124906     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.771221     Document Type: Conference Paper
Times cited : (9)

References (17)
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  • 2
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    • Lin, C.H.1    Wang, L.A.2
  • 3
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    • Adhesion and removal of micro bubbles for immersion lithography
    • A. Kawai, T. Niiyama, H. Endo, M. Yamanaka, Adhesion and removal of micro bubbles for immersion lithography, Proc. of SPIE, Vol.6153, 61531S-1 (2006).
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    • Kawai, A.1    Niiyama, T.2    Endo, H.3    Yamanaka, M.4
  • 4
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    • Simulation of the effect of a resist-surface bound air bubble on imaging in immersion lithography
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  • 5
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    • Selection and evaluation of developer-Soluble topcoat for 193 nm immersion lithography
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    • Yayi Wei, K.P.1
  • 6
    • 22144497694 scopus 로고    scopus 로고
    • A methodology for the characterization of topography induced immersion bubble defects
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  • 11
    • 23044433340 scopus 로고    scopus 로고
    • Full-field exposure tools for immersion lithography
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  • 12
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    • Defect studies of resist process for 193nm immersion lithography
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  • 15
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.