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1
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3843138266
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Study of Air Bubble Induced Light Scattering Effect On Image Quality in 193 nm Immersion Lithography
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Y. Fan, N. Lafferty, A. Bourov, L. Zavyalova, B. W. Smith, Study of Air Bubble Induced Light Scattering Effect On Image Quality in 193 nm Immersion Lithography, Proc. of SPIE, Vol.5377, p.477-486 (2004).
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Fan, Y.1
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2
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29044445150
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Simulation of air bubble scattering effects in 193nm immersion interferometric lithography
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C. H. Lin, and L. A. Wang, Simulation of air bubble scattering effects in 193nm immersion interferometric lithography, J. Vac. Sci. Technol. B, Vol.23(6), p.2684-2693, 2005.
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Lin, C.H.1
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33745593770
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Adhesion and removal of micro bubbles for immersion lithography
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A. Kawai, T. Niiyama, H. Endo, M. Yamanaka, Adhesion and removal of micro bubbles for immersion lithography, Proc. of SPIE, Vol.6153, 61531S-1 (2006).
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Kawai, A.1
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22144498788
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Simulation of the effect of a resist-surface bound air bubble on imaging in immersion lithography
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P. De Bisschop, A. Erdmann, A. Rathsfeld, Simulation of the effect of a resist-surface bound air bubble on imaging in immersion lithography, Proc. of SPIE, Vol.5754, p.243-253 (2005).
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De Bisschop, P.1
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5
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33745615445
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Selection and evaluation of developer-Soluble topcoat for 193 nm immersion lithography
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Yayi Wei, K. Petrillo, et al, Selection and evaluation of developer-Soluble topcoat for 193 nm immersion lithography, Proc. of SPIE, Vol.6153, 2006.
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Proc. of SPIE
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Yayi Wei, K.P.1
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6
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22144497694
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A methodology for the characterization of topography induced immersion bubble defects
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M. Kocsis, P. De Bisschop, et al, A methodology for the characterization of topography induced immersion bubble defects, Proc. of SPIE, Vol.5754, 2005.
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Proc. of SPIE
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Kocsis, M.1
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8
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57349106412
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Defectivity data taken with a full-field immersion exposure tool
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nd 193nm immersion symposium, Brugge, Belgium, Sept.14, 2005.
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(2005)
nd 193nm immersion symposium, Brugge, Belgium, Sept.14
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Nakano, K.1
Nagaoka, S.2
Owa, S.3
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9
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3843130608
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Micro-lens induced pattern defect in DUV resist
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S.-F. Tsai, C.-Y. Chen, C.-C. Chang, T.-W. Huang, H.-Y. Gao, and C-Y. Ku, Micro-lens induced pattern defect in DUV resist, Proc. of SPIE Vol.5376, p.1149-1156 (2004).
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Tsai, S.-F.1
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Ku, C.-Y.6
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10
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35148825964
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Non topcoat resist design for immersion defectivity reduction
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Kyoto, Japan, Oct
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S. Kanna, H. Inabe, K. Yamamoto, S. Tarutani, H. Kanda, W. Kenji, K. Kodama, and K. Shitabatake, Non topcoat resist design for immersion defectivity reduction, Presentation at International Symposium of Immersion Lithography, Kyoto, Japan, Oct. 2006.
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Presentation at International Symposium of Immersion Lithography
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Kanna, S.1
Inabe, H.2
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Kanda, H.5
Kenji, W.6
Kodama, K.7
Shitabatake, K.8
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11
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23044433340
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Full-field exposure tools for immersion lithography
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S. Owa, H. Nagasaka, Y. Ishii, K. Shiraishi, and S. Hirukawa, "Full-field exposure tools for immersion lithography", Proc. SPIE Vol.5754, 655-668 (2005).
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Owa, S.1
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12
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33745595869
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Defect studies of resist process for 193nm immersion lithography
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T. Ando, K. Ohmori, S. Maemori, T. Takayama, K. Ishizuka, Defect studies of resist process for 193nm immersion lithography, Proc. of SPIE, Vol.6153, 615309 (2006).
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Ando, T.1
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33745622556
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Immersion specific defect mechanism: Findings and recommendations for their control
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M. Kocsis, D. Van Den Heuvel, R. Gronheid, M. Maenhoudt, D. Vangoidsenhoven, G. Wells, N. Stepanenko, M. Benndorf, H. W. Kim, S. Kishimura, M. Ercken, F. Van Roey, S. O'Brien,W. Fyen, P.Foubert, R. Moerman, and B. Streefkerk, Immersion specific defect mechanism: Findings and recommendations for their control, Proc. of SPIE, Vol.6153, 2006.
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Kocsis, M.1
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Stepanenko, N.7
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Van Roey, F.12
O'Brien, S.13
Fyen, W.14
Foubert, P.15
Moerman, R.16
Streefkerk, B.17
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14
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57349197017
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Immersion Lithography Water Quality Learning at Albany
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Brugge, Belgium, September 14
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nd 193nm immersion symposium, Brugge, Belgium, September 14, 2005.
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nd 193nm immersion symposium
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Robinson, C.1
Corliss, D.2
Barns, J.3
Cummings, K.4
Jansen, H.5
Lee, B.6
Watso, R.7
Woodbeck, J.8
Goodwin, F.9
Wei, Y.10
Benson, P.11
Housley, R.12
Okoroanyanwu, U.13
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15
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33745615444
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Minimizing wafer defectivity during high temperature baking of organic films in 193nm lithography
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M. Randall, C. Longstaff, K. Ueda, J. Nicholson, T. Winter, Minimizing wafer defectivity during high temperature baking of organic films in 193nm lithography, Proc. of SPIE, Vol.6153, 61530V-1 (2006).
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Randall, M.1
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16
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57349112835
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Immersion Defect Studies
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Brugge, Belgium, September 14
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nd 193nm immersion symposium, Brugge, Belgium, September 14, 2005.
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nd 193nm immersion symposium
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Brandi, S.1
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Benson, P.3
Goodwin, F.4
Wei, Y.5
Robinson, C.6
Corliss, D.7
Cummings, K.8
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17
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35148863600
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Study on the Reduction of Defects in Immersion Lithography
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K. Ban, S. Park, C. Bok, H. Lim, J. Heo, H. Chun, J. Kang, and S. Moon, Study on the Reduction of Defects in Immersion Lithography, Proc. of SPIE Vol. 6519, 65191V, (2007).
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Ban, K.1
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