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Volumn 2002-January, Issue , 2002, Pages 179-182
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Cross validation of quantum simulations and optical measurements in single electron memories with silicon nano-crystallites
a
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Author keywords
Absorption; Electron optics; Numerical analysis; Numerical simulation; Photoluminescence; Schrodinger equation; Shape; Silicon; Single electron memory; Tunneling
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Indexed keywords
ABSORPTION;
COMPUTER SIMULATION;
ELECTRON OPTICS;
ELECTRON TUNNELING;
NUMERICAL ANALYSIS;
NUMERICAL MODELS;
OPTICAL DATA PROCESSING;
PHOTOLUMINESCENCE;
QUANTUM CHEMISTRY;
SCHRODINGER EQUATION;
SEMICONDUCTOR DEVICES;
SEMICONDUCTOR QUANTUM DOTS;
SILICON;
ABSORPTION MEASUREMENTS;
OPTICAL MEASUREMENT;
QUANTUM SIMULATIONS;
SHAPE;
SILICON QUANTUM DOTS;
SINGLE ELECTRON MEMORY;
TRANSITION ENERGY;
TUNNELING CURRENT;
ELECTRONS;
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EID: 84948735202
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/SISPAD.2002.1034546 Document Type: Conference Paper |
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Times cited : (3)
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References (7)
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