Finite element modeling of PAG leaching and water uptake in immersion lithography resist materials

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6923, Issue , 2008, Pages

  Rathsack, Ben M ^a   Scheer, Steven ^a   Kuwahara, Yuhei ^b   Kitano, Junichi ^b   Gronheid, Roel ^c   Baerts, Christina ^c  

^a TOKYO ELECTRON AMERICA INC   (United States)

^b TOKYO ELECTRON LTD   (Japan)

^c IMEC   (Belgium)

Author keywords

Immersion lithography simulation; Immersion rinse hardware; PAG diffusion; Water uptake

Indexed keywords

DIFFUSION; EXPERIMENTS; FINITE ELEMENT METHOD; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; LEACHING; MASS SPECTROMETRY; OXIDE MINERALS; PHOTOLITHOGRAPHY; QUARTZ; QUARTZ CRYSTAL MICROBALANCES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SURFACE DIFFUSION;

32NM NODES; ACID GENERATORS; DEPTH PROFILES; DIFFUSION COEFFICIENTS; DIFFUSION MODELS; DIFFUSION OF WATERS; EXPERIMENTAL APPARATUSES; EXPERIMENTAL STUDIES; FINITE ELEMENT SIMULATIONS; FINITE-ELEMENT MODELING; FLOWING WATERS; HARDWARE DESIGNS; IMAGING PERFORMANCES; IMMERSION IMAGING; IMMERSION LITHOGRAPHIES; IMMERSION LITHOGRAPHY SIMULATION; IMMERSION PROCESSES; IMMERSION RESISTS; IMMERSION RINSE HARDWARE; PAG DIFFUSION; PAG LEACHING; PHYSICAL CORRELATIONS; QUARTZ CRYSTALS; RESIST COMPONENTS; RESIST FILMS; RESIST MATERIALS; SHORT TIME SCALES; TIME SCALES; TIME-OF-FLIGHT SECONDARY ION MASS SPECTROMETRIES; TOP SURFACES; WATER UPTAKE; WATER UPTAKES;

PHOTORESISTORS;

EID: 57349100922     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.772850     Document Type: Conference Paper

References (12)

1. R. Dammel, G. Pawlowski, A. Romano, F. Houlihan, "Resist component leaching in 193-nm immersion lithography" Proc. SPIE, Vol. 5753, pp 95-101, 2005.
2. R. LeSuer, F. Fan, A. Bard, J. Taylor, P. Tsiartes, G. Willson, W. Conley, G. Fiet, R. Kunz, "Using scanning electrochemical microscopy to probe chemistry at the solid-liquid interface in chemically amplified immersion lithography" Proc. SPIE, Vol. 5376, pp 115-125, 2004.
3. S. Kanna, H. Inabe, K. Yamamoto, S. Tarutani, H. Kanda, K. Mizutani, K. Kitada, S. Uno, Y. Kawabe, "Study and control of the interfacial mass transfer of resist components in 193-nm immersion lithography" Proc. of SPIE, Vol 5753, pp 40-51, 2005.
4. P. Foubert, M. Kocsis, R. Gronheid, S. Kishimura, A. Soyano, K. Nafus, N. Stepanenko, J. De Backer, N. Vandenbroek, M. Ercken, "Measurement and Evaluation of water uptake by resists, top coats and stack and correlation with watermark defects" Proc. of SPIE, Vol 6519, 2007.
5. W. Conley, R. LeSuer, F. Fan, A. Bard, C. Taylor, P. Tsiartas, G. Willson, A. Romano, R. Dammel, "Understanding the photoresist surface-liquid interface for ArF immersion lithography" Proc. of SPIE, Vol 5753, 2005.
6. R. Gronheid, C. Baerts, S. Caporale, J. Alexander, B. Rathsack, S. Scheer, K. Ohmori, B. Rice, "World wide standardization effect on leaching measurement methodology" Immersion Symposium presentation, 2007.
7. B. Bird, W. Stewart and E. Lightfoot, Transport Phenomena, John Wiley & Sons, Inc. 1960.
8. M. Irie, K. Endo, T. Iwai, "Surface property control for 193 nm immersion resist" J. of Photopolymer Science and Tech, V19, N4, p565, 2006.
9. S. Kishimura, et. al., "Impact of water and topcoats on lithographic performance in 193 nm immersion lithography" Proc. of SPIE, Vol 5752, 2005.
10. C. Berger, C. Henderson, "Equilibrium sorption and rate of diffusion of water into photoresist thin films" Proc. of SPIE, Vol 5039, pp 984-995, 2003.
11. M. Toriumi, C. Matsubara, A. Otoguro, T. Itani, "Diffusion Mechanism of Water for Immersion Lithography" Proc. of SPIE, Vol 6153, 2006.
12. M. Kocsis, et. al. "Immersion specific defect mechanism findings and recommendations for their control" Proc. of SPIE, Vol 6154, pp 984-995, 2006.