Sputtering limits versus signal-to-noise limits in the observation of Sn balls in a Ga+ microscope

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 6, 2008, Pages 2107-2115

  Castaldo, V ^a   Hagen, C W ^a   Rieger, B ^a   Kruit, P ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ION BOMBARDMENT; ION SOURCES; IONS; MICROSCOPES; SCANNING; SCANNING ELECTRON MICROSCOPY;

COMPETING PROCESSES; DIFFRACTION CONTRIBUTIONS; ERROR BANDS; EXPERIMENTAL PROCEDURES; IMAGING MODES; IMAGING PROCESSES; IMAGING RESOLUTIONS; IRRADIATION TIMES; LIMITING FACTORS; PROBE SIZES; SAMPLING TIMES; SCANNING ELECTRON MICROSCOPES; SCANNING ION MICROSCOPES; SECONDARY ELECTRONS; SPUTTERING DAMAGES; VISUAL EVALUATIONS;

TIN;

EID: 57249086358     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3013306     Document Type: Article

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