Design, simulation, production and initial characterisation of 3D silicon detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 598, Issue 1, 2009, Pages 67-70

  Pennicard, D ^a   Pellegrini, G ^b   Lozano, M ^b   Fleta, C ^a   Bates, R ^a   Parkes, C ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

3D detectors; LHC; Radiation hardness; Semiconductor

Indexed keywords

DETECTORS; DIAMONDS; HARDNESS; LIGHT; LIGHT SOURCES; LIGHTING; PIXELS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DETECTORS; SILICON; SILICON DETECTORS;

3D DETECTORS; 3D SILICON DETECTORS; BARCELONA; CHARACTERISATION; COLLECTION TIMES; DEPLETION VOLTAGES; DESIGN AND SIMULATIONS; DIAMOND LIGHT SOURCES; ELECTRODE COLUMNS; ELECTRODE SPACINGS; LHC; MANCHESTER; PIXEL DETECTORS; RADIATION HARDNESS; RADIATION HARDNESSES; RESEARCH INSTITUTES; SEMICONDUCTOR; SILICON SUBSTRATES; SOURCE TESTS; STANFORD; STRIP DETECTORS; UNIVERSITY OF GLASGOW;

RADIATION DETECTORS;

EID: 57149120296     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2008.08.077     Document Type: Article

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