Investigation of RF sputtered PSG films for MEMS and semiconductor devices

Microelectronic Engineering

Volumn 86, Issue 1, 2009, Pages 24-32

  Bhatt, Vivekanand ^a   Chandra, Sudhir ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

MEMS; PSG; RF sputtering; Sacrificial layer; Surface micromachining

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITE MICROMECHANICS; ELECTRIC RESISTANCE; ELECTRIC RESISTANCE MEASUREMENT; MACHINING; MAGNETRON SPUTTERING; MAGNETRONS; MEMS; MICROELECTROMECHANICAL DEVICES; MICROMACHINING; MICROMECHANICS; NITRIDES; NONMETALS; PHOSPHORUS; RATE CONSTANTS; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SILICA; SILICATES; SILICON; SILICON COMPOUNDS; SILICON NITRIDE; SILICON WAFERS; SUBSTRATES; SURFACE MICROMACHINING; TARGETS;

CONFIRMATORY TESTS; CVD PROCESSES; DEPOSITED FILMS; DEPOSITION TEMPERATURES; DOPED SILICONS; ENERGY DISPERSIVE; ETCH RATES; EXTERNAL-; MAGNETRON SPUTTERING SYSTEMS; MEMS PROCESSES; PHOSPHORUS CONCENTRATIONS; PHOSPHORUS DIFFUSIONS; PSG; RF MAGNETRON SPUTTERING; RF POWERS; RF SPUTTERING; SACRIFICIAL LAYER; SACRIFICIAL LAYERS; SHEET RESISTANCE MEASUREMENTS; SI WAFERS; SOLID-STATE REACTIONS; SUBSTRATE HEATING; SURFACE MICROMACHINING TECHNOLOGIES; TEMPERATURE SENSITIVE SUBSTRATES;

FILM PREPARATION;

EID: 57049180756     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.08.014     Document Type: Article

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