Transmission electron microscopy study of the platinum germanide formation process in the Ge/Pt/Ge/SiO2/Si structure

Materials Science and Engineering: B

Volumn 154-155, Issue 1-3, 2008, Pages 175-178

  Laszcz A ^a   Ratajczak, J ^a   Czerwinski, A ^a   Katcki, J ^a   Srot, V ^b   Phillipp, F ^b   van Aken, P A ^b   Breil, N ^c,d   Larrieu, G ^c   Dubois, E ^c  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^c Institut Superieur de l'Electronique et du Numerique   (France)

^d STMICROELECTRONICS   (France)

Author keywords

EDX spectroscopy; Platinum germanides; TEM diffraction; Transmission electron microscopy (TEM)

Indexed keywords

ANNEALING; ENERGY DISPERSIVE SPECTROSCOPY; GERMANIUM; GERMANIUM COMPOUNDS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; PLATINUM; PLATINUM COMPOUNDS; SCANNING ELECTRON MICROSCOPY;

ANALYTICAL TRANSMISSION ELECTRON MICROSCOPY; EDX SPECTROSCOPY; FORMATION PROCESS; GE LAYERS; LAYER MICROSTRUCTURES; MICROSCOPY TECHNIQUE; PLATINUM GERMANIDES; TEMPERATURE RANGE; TRANSMISSION ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY DIFFRACTION;

DIFFRACTION;

EID: 57049137097     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.10.002     Document Type: Article

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