Effect of the inversion layer on the electrical characterization of Pt germanide/n-Ge (001) Schottky contacts

Applied Physics Letters

Volumn 89, Issue 24, 2006, Pages

  Yao, H B ^a   Chi, D Z ^a   Li, R ^b   Lee, S J ^b   Kwong, D L ^c,d  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c The University of Texas at Austin   (United States)

^d INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CHARACTERIZATION; INVERSION LAYERS; SCHOTTKY CONTACTS; SOLID STATE REACTIONS;

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; GERMANIUM COMPOUNDS; INTERFACES (MATERIALS); PLATINUM COMPOUNDS; RAPID THERMAL ANNEALING;

METALLIC FILMS;

EID: 33845732715     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2408665     Document Type: Article

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