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Volumn 85, Issue 23, 2004, Pages 5721-5723

Enhanced luminescence from electron-hole droplets in silicon nanolayers

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INSULATORS; ELECTRONS; EXCITONS; LUMINESCENCE; NUCLEATION; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SILICON ON INSULATOR TECHNOLOGY;

EID: 12844280582     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1829161     Document Type: Article
Times cited : (21)

References (18)
  • 12
    • 12844249383 scopus 로고    scopus 로고
    • note
    • 11.
  • 13
    • 33646613539 scopus 로고
    • The average electron-hole densities were evaluated from the excitation intensity dependence of the PL intensity from the FE and EHD in bulk Si under the same experimental conditions and the phase diagram of electrons and holes in the literature [J. Shah, M. Combescot, and A. H. Dayen, Phys. Rev. Lett. 38, 1497 (1977)].
    • (1977) Phys. Rev. Lett. , vol.38 , pp. 1497
    • Shah, J.1    Combescot, M.2    Dayen, A.H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.