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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 253, Issue 1-2, 2006, Pages 205-209

Stress-dependent transformation of interstitial oxygen in processed Ge-doped Cz-Si

(6) Misiuk, A a Londos, C A b Bak Misiuk, J c Yang, Deren d Jung, W a Prujszczyk, M a

a ukasiewicz Research Network Institute of Microelectronics and Photonics (Poland)

b UNIVERSITY OF ATHENS (Greece)

c INSTITUTE OF PHYSICS (Poland)

d ZHEJIANG UNIVERSITY (China)

Author keywords

Annealing; Cz Si; Ge doping; Hydrostatic pressure; Interstitial oxygen; Oxygen precipitation

Indexed keywords

AGGLOMERATION; CRYSTAL GROWTH FROM MELT; DOPING (ADDITIVES); GERMANIUM; HYDROSTATIC PRESSURE; PHASE TRANSITIONS; PRECIPITATION (CHEMICAL); STRESS CONCENTRATION;

GE DOPING; INTERSTITIAL OXYGEN; OXYGEN PRECIPITATION;

OXYGEN;

EID: 33751422747 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/j.nimb.2006.10.028 Document Type: Article

Times cited : (8)

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