Oxygen-related micro-defects in czochralski silicon annealed at enhanced stress conditions

International Journal of Inorganic Materials

Volumn 3, Issue 8, 2001, Pages 1197-1199

  Misiuk, A ^a   Surma, H B ^a   Lopez, M ^b  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b UNIVERSITY OF BARCELONA   (Spain)

Author keywords

Annealing; Cz Si; Hydrostatic pressure; Oxygen; Oxygen related defects; Precipitation

Indexed keywords

OXYGEN; SILICON;

CONFERENCE PAPER; CRYSTAL; ELECTRONICS; FOURIER TRANSFORMATION; HIGH TEMPERATURE PROCEDURES; HYPERBARISM; INFRARED SPECTROSCOPY; PRECIPITATION; STRESS; STRUCTURE ANALYSIS;

EID: 0035215262     PISSN: 14666049     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1466-6049(01)00125-8     Document Type: Conference Paper

References (5)