Defects in high temperature-pressure treated Czochralski silicon detected by photoluminescence and related methods

EPJ Applied Physics

Volumn 27, Issue 1-3, 2004, Pages 301-303

  Misiuk, A ^a   Surma, B ^a   Bak Misiuk, J ^b  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; HIGH PRESSURE EFFECTS; HIGH TEMPERATURE EFFECTS; HYDROSTATIC PRESSURE; INFRARED RADIATION; PHOTOLUMINESCENCE; PRECIPITATION (CHEMICAL); SILICON;

INFRARED ABSORPTION; OXYGEN PRECIPITATION; PRESSURE TREATMENT; SPECIFIC DEFECTS;

CRYSTAL GROWTH FROM MELT;

EID: 10244262707     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:2003073     Document Type: Conference Paper

References (8)

1. A. Borghesi, B. Pivac, A. Sassella, A. Stella, J. Appl. Phys. 77, 4169 (1995)
2. A. Misiuk, B. Surma, J. Hartwig, Mater. Sci. Eng. B 36, 30 (1996)
3. A. Misiuk, H. B. Surma, J. Bak-Misiuk, M. Lopez, A. Romano-Rodriguez, J. Hartwig, J. Alloys Comp. 328, 90 (2001)
4. A. Misiuk, H. B. Surma, M. Lopez, Int. J. Inorg. Mater. 3, 1197 (2001)
5. A. Misiuk, Phys. Stat. Sol. A 171, 191 (1999)
6. A. T. Blumenau, R. Jones, S. Oberg, T. Frauenheim, P. R. Briddon, J. Phys.: Cond. Matter 12, 10123 (2000)
7. K. H. Cho, J. Y. Lee, E. K. Suh, K. W. Kim, Jpn J. Appl. Phys. 36, 1 (1997)
8. A. Misiuk, Mater. Phys. Mech. 1, 119 (2000)