Microstructure and electrical properties of Bi2O3 excess Bi3.25La0.75Ti3O12 ferroelectric ceramics

Materials Chemistry and Physics

Volumn 113, Issue 1, 2009, Pages 422-427

  Wu, Yunyi ^a   Zhang, Duanming ^a   Yu, Jun ^a   Wang, Yunbo ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Ceramic; Ferroelectricity; Raman spectroscopy and scattering; X ray diffraction topography

Indexed keywords

BUILDING MATERIALS; CERAMIC CAPACITORS; COERCIVE FORCE; DIELECTRIC WAVEGUIDES; ELECTRIC PROPERTIES; FERROELECTRIC CERAMICS; FERROELECTRICITY; HYSTERESIS; HYSTERESIS LOOPS; LANTHANUM; LEAKAGE CURRENTS; MAGNETIC MATERIALS; MAGNETIC PROPERTIES; MICROSTRUCTURE; PERMITTIVITY; POLARIZATION; RAMAN SCATTERING; RAMAN SPECTROSCOPY; X RAY ANALYSIS;

CERAMIC; CERAMIC SAMPLES; COERCIVE FIELDS; DIELECTRIC CONSTANTS; ELECTRICAL PROPERTIES; LOSS TANGENTS; POLARIZATION BEHAVIORS; RAMAN SPECTROSCOPY AND SCATTERING; RAMAN SPECTRUMS; REMNANT POLARIZATIONS; X-RAY DIFFRACTION TOPOGRAPHY;

CERAMIC MATERIALS;

EID: 56449085395     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2008.07.103     Document Type: Article

References (25)

1. Scott J.F. Jpn. J. Appl. Phys. 38 (1999) 2272
2. Paz de Araujo C.A., Cuchlaro J.D., McMillan L.D., Scott M.C., and Scott J.F. Nature (London) 374 (1995) 627
3. Villegas M., Moure C., Fernandez J.F., and Duran P. Ceram. Int. 22 (1996) 15
4. Watanabe H., Kimura T., and Yamaguchi T. J. Am. Ceram. Soc. 74 (1991) 139
5. Cummins S.E., and Cross L.E. J. Appl. Phys. 39 (1968) 2268
6. Scott J.F. Ferroelectric Memories (2000), Springer Press, Berlin
7. Kim J.S., Ahn C.W., Lee H.J., and Lee S.Y. Ceram. Int. 30 (2004) 1565
8. Scott J.F., and Araujo C.A. Science 246 (1989) 1400
9. Kato K., Zheng C., Finder J.M., Dey S.K., and Torii Y. J. Am. Ceram. Soc. 81 (1998) 1869
10. Park B.H., Kang B.S., Bu S.D., Noh T.W., and Lee W.J. Nature 401 (1999) 682
11. Kingon A. Nature 401 (1999) 658
12. Ramesh R., Aggarwal S., and Auciello O. Mater. Sci. Eng. B 32 (2001) 191
13. Ramesh R., and Schlom D.G. Science 296 (2002) 1975
14. Kim J.S., Lee H.J., Lee S.Y., Kang S.H., Ahn C.W., Kim I.W., Lee K.S., and Lee H.S. J. Korean Phys. Soc. 46 (2005) 147
15. Kim J.S., Jang M.S., kim I.W., and Lee K.S. J. Korean Phys. Soc. 47 (2006) 280
16. Kim K.T., and Kim C.I. Microelectron. Eng. 71 (2004) 266-271
17. Lin J.L., Chang T.L., and Lin W.T. J. Electron. Mater. 33 (2004) 1248-1252
18. Shimakawa Y., Kubo Y., Tauchi Y., Asano H., Kamiyama T., Izumi F., and Hiroi Z. Appl. Phys. Lett. 79 (2001) 2791
19. Watanabe H., Mihara T., Yoshimori H., and Paz de Araujo C.A. Jpn. J. Appl. Phys. 34 (1995) 5240
20. Kojima S., and Shimada S. Physica B 219-220 (1996) 617
21. Kojima S., Imaizumi R., Hamazake S., and Takashige M. Jpn. J. Appl. Phys. 1 33 (1994) 5559
22. Meng J.F., Dobal P.S., Katiyar R.S., and Zou G.T. J. Raman Spectrosc. 29 (1998) 1003
23. Idink H., Srikanth V., White W.B., and Subbarao E.C. J. Appl. Phys. 76 (1994) 1819
24. Sugita N., Tokuitsu E., Osada M., and Kakihana M. Jpn. J. Appl. Phys. 2 42 (2003) L944
25. Kumar M.M., and Ye Z.G. J. Appl. Phys. 90 (2001) 934