Dependence of structure and properties of Ba(Zr0.25Ti 0.75)O3 thin films on temperature and post-annealing

Journal of Physics D: Applied Physics

Volumn 41, Issue 20, 2008, Pages

  Doan, V D O ^a   Lai, M O ^a   Lu, L ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BARIUM; LATTICE CONSTANTS; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SILICON; SILICON COMPOUNDS; SOLIDS; TEXTURES; THICK FILMS; THIN FILM DEVICES; THIN FILMS; ZIRCONIUM;

CRYSTALLINITY; DEPOSITION TEMPERATURES; DIELECTRIC CONSTANTS; HIGH TUNABILITY; LASER DEPOSITIONS; LATTICE PARAMETERS; SI SUBSTRATES; STRUCTURE AND PROPERTIES; SURFACE TEXTURES; TUN ABILITIES; TUNABLE DEVICES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 56349117690     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/20/205408     Document Type: Article

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