In-sttu investigations of gan chemical instability during MOCVD

Proceedings - Electrochemical Society

Volumn PV 2005-09, Issue , 2005, Pages 299-305

  Zavarin, E E ^a   Sizov, D S ^a   Lundin, W V ^a   Tsatsulnikov, A F ^a   Talalaev, R A ^b   Kondratyev, A V ^b   Bord, O V ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b SOFT IMPACT LTD   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; DECOMPOSITION; ETCHING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PARTIAL PRESSURE; REFLECTION;

ETCHING RATE; HYDROGEN ADSORPTION; OPTICAL REFLECTANCE;

GALLIUM NITRIDE;

EID: 31744431971     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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2. D.D. Koleske, A.E. Wickenden, And R.L. Henry, MRS Internet J. Nitride Semicond. Res. 5S1, W3.64 (2000)
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8. S. S. Liu, D. A. Stevenson, J. of the Electrochem. Soc. 1978, 125, p. 1161