Effect of metallic surface coverage on material quality in III-nitride MOVPE

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1691-1694

  Kondratyev, A V ^a   Talalaev, R A ^a,b   Segal, A S ^a   Yakovlev, E V ^a   Lundin, W V ^c   Zavarin, E E ^c   Sinitsyn, M A ^c   Tsatsulnikov, A F ^c   Nikolaev, A E ^c  

^a SOFT IMPACT LTD   (Russian Federation)

^b Semiconductor Technology Research   (Germany)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION LAYER; AMMONIA ATMOSPHERE; DEVICE STRUCTURES; FREE LAYERS; GASPHASE; GROWING SURFACES; III-NITRIDE; MATERIAL QUALITY; METALLIC SURFACE; MODERATE TEMPERATURE; MOVPE; MOVPE GROWTH; NITRIDE GROWTH; SURFACE KINETICS;

ADSORPTION; AMMONIA; DEFECTS; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; SURFACES;

SEMICONDUCTOR GROWTH;

EID: 56249136019     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778589     Document Type: Conference Paper

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