Influence of the carrier gas composition on metalorganic vapor phase epitaxy of gallium nitride

Technical Physics Letters

Volumn 31, Issue 4, 2005, Pages 293-294

  Lundin, W V ^a   Zavarin, E E ^a   Sizov, D S ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34248515466     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1920375     Document Type: Article

References (8)

1. A. V. Sakharov, W. V. Lundin, I. L. Krestnikov, et al., in Proceedings of the International Workshop on Semiconductor Nitrides (IWN 2000), Nagoya, 2000, Ed. by H. Amano and A. Wakahara.
2. S. Yamaguchi, M. Kariya, M. Kosaki, et al., J. Appl. Phys. 89, 7820 (2001).
3. O. Schon, B. Schineller, M. Heuken, et al., J. Cryst. Growth 189-190, 335 (1998).
4. S. Nakamura, Jpn. J. Appl. Phys. 30, L1705 (1991).
5. H. X. Wang, Y. Amijima, Y. Ishihama, et al., J. Cryst. Growth 233, 681 (2001).
6. W. V. Lundin, A. V. Sakharov, A. F. Tsatsul’nikov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 38, 705 (2004) [Semiconductors 38, 678 (2004)].
7. S. S. Liu and D. A. Stevenson, J. Electrochem. Soc. 125, 1161 (1978).
8. N. L. Glinka, General Chemistry (Khimiya, Leningrad, 1983) [in Russian].