In-situ monitoring of surface stoichiometry and growth kinetics study of GaN (0001) in MOVPE by spectroscopic ellipsometry

Journal of Electronic Materials

Volumn 30, Issue 11, 2001, Pages 1402-1407

  Taniyasu, Yoshitaka ^a   Yoshikawa, Akihiko ^a  

^a CHIBA UNIVERSITY   (Japan)

Author keywords

GaN; In situ spectroscopic ellipsometry; MOVPE; Surface stoichiometry

Indexed keywords

CRYSTAL ORIENTATION; DECOMPOSITION; ELLIPSOMETRY; EVAPORATION; GALLIUM NITRIDE; GROWTH KINETICS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR GROWTH; STOICHIOMETRY; SURFACE PHENOMENA; THERMAL EFFECTS;

SURFACE STOICHIOMETRY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035517115     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-001-0191-z     Document Type: Article

References (15)