Raman scattering of polycrystalline 3C-SiC film deposited on AlN buffer layer by using CVD with HMDS

Microelectronics Journal

Volumn 39, Issue 12, 2008, Pages 1405-1407

  Chung, Gwiy Sang ^a   Kim, Kang San ^a  

^a University of Ulsan   (South Korea)

Author keywords

AlN; HMDS; Poly 3C SiC; Raman scattering

Indexed keywords

ANNEALING; ATMOSPHERIC PRESSURE; BUFFER LAYERS; CARBON; CHEMICAL VAPOR DEPOSITION; GRAPHITE; OPTICAL WAVEGUIDES; RAMAN SCATTERING; SCATTERING; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; THICK FILMS;

ALN; ALN LAYERS; ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITIONS; BEFORE AND AFTER; BIAXIAL STRESSES; CARRIER GASES; HEXAMETHYLDISILANE; HMDS; POLY 3C-SIC; POLYCRYSTAL LINES; RAMAN PEAKS; RAMAN SHIFTS; RAMAN SPECTRUMS; SCATTERING CHARACTERISTICS; SIC FILMS; SIC THIN FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 56249096163     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.06.053     Document Type: Article

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