Lattice-matched boronphosphide (BP)/hexagonal GaN heterostructure for inhibition of dislocation penetration

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2027-2030

  Udagawa, T ^a   Odawara, M ^a   Shimaoka, G ^b  

^a High Performance Materials Department   (Japan)

^b SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL RELATIONSHIPS; HEXAGONAL SHAPES; HIGH-RESOLUTION TEM; LATTICE-MATCHED; MATCHING PROPERTY; METAL-ORGANIC; ZINC-BLENDE;

HETEROJUNCTIONS;

GALLIUM NITRIDE;

EID: 1242295888     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303434     Document Type: Conference Paper

References (6)

1. O. Contreras, F. A. Ponce, J. Cristen, A. Dadgar, and A. Krost, Appl. Phys. Lett. 81, 4712 (2002).
2. T. Nishinaga, T. Nakano, and S. Zhang, Jpn. J. Appl. Phys. 27, 1964 (1988).
3. Sergey Yu. Karpov and Yuri N. Makarov, Appl. Phys. Lett. 81, 4721 (2002).
4. T. Udagawa and G. Shimaoka, J. Ceramic Processing Res. 4, 80 (2003).
5. Arden Sher (Inventor), International Application Published under the Patent Cooperation Treaty (PCT), International Publication Number WO 85/03598 (15 Aug., 1985).
6. J. C. Phillips, Bonds and Bands in Semiconductors (Academic Press, New York/London, 1973), Chap.2.