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Volumn 275, Issue 1-2, 2005, Pages
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Growth mechanism and structural characterization of hexagonal GaN films grown on cubic GaN (1 1 1)/GaAs (1 1 1)B substrates by MOVPE
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Author keywords
A1. Crystal structure; A1. High resolution X ray diffraction; A1. Structural transition; A1. Transmission electron microscopy; A3. MOVPE; B1. Nitrides
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Indexed keywords
CRYSTAL STRUCTURE;
CRYSTALLIZATION;
DISLOCATIONS (CRYSTALS);
EPITAXIAL GROWTH;
FILM GROWTH;
METALLORGANIC VAPOR PHASE EPITAXY;
NITRIDES;
SEMICONDUCTING GALLIUM ARSENIDE;
SUBSTRATES;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION;
HIGH-RESOLUTION X-RAY DIFFRACTION (HRXRD);
STRUCTURAL TRANSITIONS;
TRIMETHLGALLIUM (TMG);
GALLIUM NITRIDE;
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EID: 15944377345
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.11.126 Document Type: Conference Paper |
Times cited : (2)
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References (10)
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