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Volumn 275, Issue 1-2, 2005, Pages

Growth mechanism and structural characterization of hexagonal GaN films grown on cubic GaN (1 1 1)/GaAs (1 1 1)B substrates by MOVPE

Author keywords

A1. Crystal structure; A1. High resolution X ray diffraction; A1. Structural transition; A1. Transmission electron microscopy; A3. MOVPE; B1. Nitrides

Indexed keywords

CRYSTAL STRUCTURE; CRYSTALLIZATION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EID: 15944377345     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.11.126     Document Type: Conference Paper
Times cited : (2)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.