Enhanced electroluminescence in 405 nm InGaN/GaN LEDs by optimized electron blocking layer

Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 5154-5157

  Svensk, O ^a   Torma P T ^a   Suihkonen, S ^a   Ali, M ^a   Lipsanen, H ^a   Sopanen, M ^a   Odnoblyudov, M A ^b   Bougrov, V E ^b  

^a AALTO UNIVERSITY   (Finland)

^b Optogan Oy   (Finland)

Author keywords

A1. Diffusion; A1. Doping; A3. MOCVD; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

CHEMICAL PROPERTIES; ELECTROLUMINESCENCE; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; LUMINESCENCE; NITRIDES; OPTICAL PROPERTIES; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANIC LIGHT EMITTING DIODES (OLED); ORGANOMETALLICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS;

A1. DIFFUSION; A1. DOPING; A3. MOCVD; B1. NITRIDES; B2. SEMICONDUCTING III-V MATERIALS;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 56249087175     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.07.025     Document Type: Article

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