New photoluminescence lines in Vanadium doped GaAs grown by MOVPE

Microelectronics Journal

Volumn 34, Issue 4, 2003, Pages 271-274

  Bchetnia, A ^a   Rebey, A ^a   El Jani, B ^a   Cernogora, J ^b   Fave, J L ^b  

^a UNIVERSITY OF MONASTIR   (Tunisia)

^b CNRS   (France)

Author keywords

Metalorganic vapour phase epitaxy; Photoluminescence; V doped GaAs

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; HALL EFFECT; IONIZATION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING;

IONIZATION ENERGY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037381693     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(02)00195-7     Document Type: Article

References (30)

1. Kaufman U., Ennen H., Schneider J., Worner R., Weber J., Kohl F. Phys. Rev. B25:1982;5598.
2. Terao M., Sunakawa H., Ohata K., Watnabe. Makram-Ebeid S., Tuck B. Semi-Insulating III-V Materials. 1982;54 Shiva Publishing, Nantwich, UK.
3. Mircea-Roussel A., Martin G.M., Lowther J.E. Solid State Commun. 36:1980;171.
4. Litty E., Leyral P., Loualiche S., Nouailhat A., Guillot G., Lannoo M. Proc. 16th Int. Conf. Phys. Semi-Cond. Montpellier, Phys. 117:(3):1983;191.
5. Clerjeaud B. J. Phys. C: Solid State Phys. 18:1985;3615.
6. Clerjeaud B., Côte D., Naud C. Phys. Rev. Lett. 58:1987;1755.
7. Brandt C.D., Hennel A.M., Pawlowicz L.M., Dabkowski F.P., Lagowski J., Gatos H.C. Appl. Phys. Lett. 47:1987;607.
8. Hennel A.M., Brandt C.D., Ko K.Y., Lagowski J., Gatos H.C. J. Appl. Phys. 62:1987;163.
9. Ko K.Y., Lagowski J., Gatos H.C. J. Appl. Phys. 66:1989;7.
10. Hobson W.S., Pearton S.J., Swanminathan V., Jordan A.S., Kauber H., Kao Y.J., Haeyel N.M. Appl. Phys. Lett. 54:1989;18.
11. Balasubramanian S., Kumar V. Semicond. Sci. Technol. 7:1992;1117.
12. Akiyama M., Kawarada Y., Kaminishi. J. Cryst. Growth. 68:1984;39.
13. Akiyama M., Kawarada Y., Nishi S., Ueda T., Kaminishi. Mater. Res. Soc. Symp. Proc. 67:1986;53.
14. Kawarada Y., Akiyama M., Kaminishi. Semi-Insulating III-V Materials. 1986;. pp. 509.
15. Rebey A., Bchetnia A., Benjeddou C., El Jani B., Gibart P. J. Cryst. Growth. 194:1998;292.
16. Bchetnia A., Rebey A., Boufaden T., El Jani B. J. Cryst. Growth. 207:1999;15.
17. Rebey A., Bchetnia A., El Jani B. J. Cryst. Growth. 194:1998;286.
18. Koschel W.H., Smith R.S., Hiesinger P. J. Eletrochem. Soc., Solid-State Sci. Technol. 128:1981;1336.
19. Sasaki Y., Sato T., Matsushita K., Hariu T., Shibata Y. J. Appl. Phys. 54:1985;1109.
20. Itoth T., Takeuchi M. Jpn. J. Appl. Phys. 16:1976;227.
21. Lum W.Y., Wieder H.H. J. Appl. Phys. 49:1978;6187.
22. Otsubo M., Miki H., Mitsui S. Jpn. J. Appl. Phys. 16:1977;1957.
23. Shin K.C., Kwark M.H., Choi M.H., Oh M.H., Tak Y.B. J. Appl. Phys. 65:1989;736.
24. A. Bchetnia, A. Rebey, J.C. Bourgoin, B. El Jani Semicond. Sci. Technol. submitted.
25. Carlone C. J. Lumin. 72:(74):1997;646.
26. Hata M., Fukuhara N., Zempo Y., Isemura M., Yako T., Maeda T. J. Cryst. Growth. 93:1988;543.
27. Ulrici W., Friedland K., Eaves L., Halliday D.P. Phys. Stat. Sol. 131:1985;719.
28. Gladkov P.S., Ozayan K.B. Phys. Stat. Sol. 9:1988;108.
29. Caldas M.J., Figueiredo S.K., Fazzio A. Phys. Rev. B. 33:1986;7102.
30. Kao Y.J., Haegel N.M. Phys. Rev. B. 48:1993;4433.