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Applied Physics Letters

Volumn 93, Issue 18, 2008, Pages

High-resolution characterization of defects in oxide thin films

(3) Nikiforov, Maxim N a,b Brukman, Matthew J a Bonnell, Dawn A a

a UNIVERSITY OF PENNSYLVANIA (United States)

b OAK RIDGE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCES; BAND GAPS; CURRENT INCREASES; ELECTRICAL PROPERTIES; HIGH RESOLUTIONS; LEAKAGE CURRENT MEASUREMENTS; OXIDE THIN FILMS; SPATIAL RESOLUTIONS; STRESS INDUCED; TIP RADIUSES;

ELECTRIC CURRENT MEASUREMENT; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; OXIDE FILMS; THICK FILMS;

LEAKAGE (FLUID);

EID: 55849149448 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2982082 Document Type: Article

Times cited : (7)

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