Comparison of scanning capacitance microscopy and scanning Kelvin probe microscopy in determining two-dimensional doping profiles of Si homostructures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 1, 2006, Pages 404-407

  Park, S E ^a   Nguyen, N V ^a   Kopanski, J J ^a   Suehle, J S ^a   Vogel, E M ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING CONCENTRATION; SCANNING CAPACITANCE MICROSCOPY (SCM); SCANNING KELVIN PROBE MICROSCOPY;

CAPACITANCE; CONCENTRATION (PROCESS); DOPING (ADDITIVES); SCANNING;

MICROSCOPIC EXAMINATION;

EID: 31544439405     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2162569     Document Type: Article

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