Extraction of sheet resistance and line width from all-copper BCD test structures fabricated from silicon preforms

IEEE Transactions on Semiconductor Manufacturing

Volumn 21, Issue 4, 2008, Pages 495-503

  Shulver, Byron J R ^a,b   Bunting, Andrew S ^a   Gundlach, Alan M ^a   Haworth, Les I ^a   Ross, Alan W S ^a   Smith, Stewart ^a   Snell, Anthony J ^a   Stevenson, J T M ^a   Walton, Anthony J ^a   Allen, Richard ^c   Cresswell, Michael W ^c  

^a UNIVERSITY OF EDINBURGH   (United Kingdom)

^b Natl Semiconductor UK Ltd   (United Kingdom)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Copper; Critical dimension (CD); Electrical critical dimension (ECD); Electrical test structure; Line width; Metrology

Indexed keywords

COPPER; ELECTRIC RESISTANCE; ELECTROCHEMICAL SENSORS; ELECTROCHROMIC DEVICES; ELECTROOPTICAL DEVICES; INTEGRATED CIRCUITS; METAL RECOVERY; PAPER SHEETING; REDUCTION; SHEET RESISTANCE; SILICON; SMELTING; TESTING;

CRITICAL DIMENSION (CD); ELECTRICAL CRITICAL DIMENSION (ECD); ELECTRICAL TEST STRUCTURE; LINE WIDTH; METROLOGY;

PHOTORESISTS;

EID: 55649111856     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2008.2004312     Document Type: Conference Paper

References (15)

1. M. W. Cresswell, N. Arora, R. A. Allen, C. E. Murabito, C. Richter, A. Gupta, L. W. Linholm, D. Pachura, and P. Bendix, "Test chip for electrical linewidth of copper-interconnect features and related parameters," in Proc. IEEE Int. Conf. Microelectronic Test Structures (ICMTS'01), Mar. 2001, vol. 14, pp. 183-188.
2. T. Turner, "Requirements for dual-damascene Cu-linewidth resistivity measurements," Solid State Technol., vol. 43, no. 4, pp. 89-94, Apr. 2000.
3. S. Smith, A. J. Walton, A. W. S. ROSS, G. K. H. Bodammer, and J. T. M. Stevenson, "Evaluation of sheet resistance and electrical linewidth measurement techniques for copper damascene interonnect," Solid State Technol., vol. 15, no. 2, pp. 214-222, May 2002.
4. B. J. R. Shulver, A. S. Bunting, A. M. Gundlach, L. I. Haworth, A. W. S. Ross, A. J. Snell, J. T. M. Stevenson, A. J. Walton, R. A. Allen, and M. W. Cresswell, "Design and fabrication of a copper test structure for use as an electrical critical dimension reference," in Proc. IEEE Int. Conf. Microelectronic Test Structures (ICMTS'06), Mar. 6-9, 2006, pp. 124-129.
5. R. A. Allen, B. A. Ende, M. W. Cresswell, C. E. Murabito, T. J. Headley, W. F. Gutherie, L. W. Linholm, C. H. Ellenwood, and E. H. Bogardus, "Test structures for referencing electrical linewidth measurements to silicon lattice parameters using hrtem," IEEE Trans. Semicond. Manuf., vol. 16, no. 2, pp. 239-248, May 2003.
6. R. A. Alien, T. J. Headley, S. C. Everist, R. Ghoshtagore, M. W. Cress-well, and L. W. Linholm, "High-resolution transmission electron microscopy calibration of critical dimension (CD) reference materials," IEEE Trans. Semicond. Manuf., vol. 14, no. 1, pp. 26-31, Feb. 2001.
7. T. Hatsuzawa and K. Toyoda, "Critical dimension measurements by electron and optical beams for the establishment of linewidth standards," in Proc. IEEE 1992 Int. Microelectronic Test Structures, Mar. 1992, vol. 5, pp. 180-184.
8. R. A. Alien, M. W. Cresswell, and L. W. Linholm, "Junction-isolated electrical test structures for critical dimension calibration standards," IEEE Trans. Semicond. Manuf., vol. 17, no. 2, pp. 79-83, May 2004.
9. M. W. Cresswell, W. F. Guthrie, R. G. Dixson, R. A. Alien, C. E. Murabito, and J. V. Martinez, "Rm 8111: development of a prototype linewidth standard," J. Res. Nat. Inst. Standards and Technol., vol. 111, pp. 187-203, 2006.
10. M. W. Cresswell and R. A. Allen, Handbook of Silicon Semiconductor Metrology. New York: Marcel Dekker, 2001, pp. 377-410.
11. L. J. Van Der Pauw, "A method of measuring specific resistivity and hall effects of discs of arbitrary shape," Phillips Res. Rep., vol. 13, pp. 1-9, 1958.
12. M. W. Cresswell, J. J. Sniegowski, R. N. Ghoshtagore, R. A. Allen, W. F. Guthrie, A. Gurnell, L. W. Linholm, R. G. Dixson, and E. C. Teague, "Recent developments in electrical linewidth and overlay metrology for integrated circuit fabrication processes," Jpn. J. Appl. Phys., vol. 35, pp. 6597-6609, 1996.
13. R. A. Allen, M. W. Cresswell, and L. M. Buck, "A new test structure for the electrical measurement of the width of short features with arbitrarily wide voltage taps," IEEE Electron Device Lett., vol. 13, no. 6, pp. 322-324, Jun. 1992.
14. M. W. Cresswell, R. A. Allen, and L. W. Linholm, "Linewidth Micro-Bridge Test Structure,", 1993.
15. , D. Lide, Ed., Handbook of Chemistry and Physics, 80th ed. Boca Raton, FL: CRC, 1999.