Design and fabrication of a copper test structure for use as an electrical critical dimension reference

IEEE International Conference on Microelectronic Test Structures

Volumn 2006, Issue , 2006, Pages 124-129

  Shulver, B J R ^a   Bunting, A S ^a   Gundlach, A M ^a   Haworth, L I ^a   Ross, A W S ^a   Snell, A J ^a   Stevenson, J T M ^a   Walton, A J ^a   Allen, R A ^b   Cresswell, M W ^b  

^a UNIVERSITY OF EDINBURGH   (United Kingdom)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER LINES; ELECTRICAL CRITICAL DIMENSION (ECD); LINEWIDTH; VERTICAL SIDEWALLS;

COPPER; DESIGN FOR TESTABILITY; ELECTRIC VARIABLES MEASUREMENT; ETCHING; SILICON NITRIDE; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

MICROELECTRONICS;

EID: 33749510718     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICMTS.2006.1614288     Document Type: Conference Paper

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