Sensing characteristics of a novel MISiC Schottky-diode hydrogen sensor with HfO2 as gate insulator

2007 International Semiconductor Device Research Symposium, ISDRS

Volumn , Issue , 2007, Pages

  Tang, W M ^a   Leung, C H ^a   Lai, P T ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL SENSORS; DETECTORS; ELECTRIC CONDUCTIVITY; HAFNIUM COMPOUNDS; HYDROGEN; NONMETALS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES; SENSORS;

HYDROGEN SENSORS; INTERNATIONAL (CO); SCHOTTKY; SENSING CHARACTERISTICS;

SEMICONDUCTOR DIODES;

EID: 44949238783     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2007.4422251     Document Type: Conference Paper

References (4)

1. 3-ZnO/SiC Schottky Diode-Based Hydrocarbon Gas Sensor," IEEE Sensors Journal, vol. 3, No. 5, pp. 548-553, 2003.
2. L.-G. Ekedahl, M. Eriksson, I. Lundstrom, "Hydrogen sensing mechanisms of metal-insulator interfaces," Acc. Chem. Res. 31 (5), pp.249-256, 1998.
3. 3 thin film," Material Science and Engineering, pp. 177-194, 2000.
4. L. W. Chau, Pan His-Jen, et al., "Hydrogen Sensitive Characteristics of a Novel Pd/InP MOS Schottky Diode Hydrogen Sensor," IEEE Trans. Electron Devices, vol. 48, No. 9, pp. 1938 - 1944, 2001.