Molybdenum contamination in indium and boron implantation processes

ECS Transactions

Volumn 10, Issue 1, 2007, Pages 85-94

  Codegoni, D ^a   Polignano, M L ^a   Soncini, V ^a   Bresolin, C ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; DEEP LEVEL TRANSIENT SPECTROSCOPY; INDIUM; MOLYBDENUM; SEMICONDUCTOR MATERIALS;

BORON IMPLANTATION; HIGH DOSE; IMPLANTATION CONDITIONS; LINE MONITORING; MASS INTERFERENCES;

CONTAMINATION;

EID: 55649084558     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2773979     Document Type: Conference Paper

References (20)

1. J. F. Ziegler, Handbook of Ion Implantation Technology, pp.675-691, North Holland, Amsterdam, (1992)
2. M. L. Polignano, C. Bresolin, F. Cazzaniga, A. Sabbadini and G. Queirolo, in Optical Characterization Techniques for High-Performance Microelectroni Device Manufacturing II, J.K. Lowell, R.T.Chen, J.P.Mathur, eds., Proc. SPIE 2638, p. 14, SPIE-Int. Soc. Opt. Eng. (1995)
3. M. L. Polignano, D. Caputo, A. Giussani, V. Soncini, G. Di Toma, in 2000 International Conference on Ion Implantation Technology Proceedings, H. Ryssel, L. Frey, J. Gyulai and H. Glawischnig, eds., p. 686, IEEE, Piscataway, NJ (2000)
4. K. Funk, V. Haublein, H. Chakor, M. Ameen, L. Frey, H. Ryssel, A. Ramirez, 2000 International Conference on Ion Implantation Technology Proceedings, H. Ryssel, L. Frey, J. Gyulai and H. Glawischnig, eds., p. 711, IEEE, Piscataway, NJ (2000)
5. V. Haublein, L. Frey, H. Ryssel, in 2002 International Conference on Ion Implantation Technology Proceedings, B. Brown, T. L. Alford, M. Nastasi and M. C. Vella, eds., p. 217, IEEE, Piscataway, NJ (2002)
6. A. Rohatgi, R. H. Hopkins, J. R. Davis, R. B. Campell and H. C. Mollenkopf, Solid-State Electron. 23, 1185 (1980)
7. M. L. M. L. Polignano, C. Bresolin, G. Pavia, V. Soncini, F. Zanderigo, G. Queirolo, M. Didio, Mat. Sci. Eng. B 53, 300 (1998)
8. G. Ferenczi, J. Boda and T. Pavelka, Phys. Stat. Sol. (a) 94, Kl 19 (1986)
9. G. Ferenczi, C. A. Londos, T. Pavelka, and M. Somogyi, A. Mertend, J. Appl. Phys. 63, 183 (1988)
10. V. Lehmann and H. Föill, J. Electrochem. Soc. 135, 2831 (1988)
11. E. Yablonovitch, D. L. Allara, C. C. Chang, T. Gmitter and T. B. Bright, Phys. Rev. Letters 57, 249 (1986)
12. M. L. Polignano, F. Cazzaniga, A. Sabbadini, F. Zanderigo, F. Priolo, Mat. Sci. Eng. B 55, 21 (1998)
13. M. L. Polignano, A. P. Caricato, A. Modelli and R. Zonca, J. of the Electrochem. Soc. 147, 76(2000)
14. M. L. Polignano, F. Cazzaniga, A. Sabbadini, G. Queirolo, A. Cacciato and A. Di Bartolo, Mat. Sci. Engineering B 42, 157, (1996)
15. A. M. Goodman, J. Appl. Phys. 32 2550 (1961)
16. J. Lagowski, P. Edelman, A. M. Kontkiewicz, O. Milic, W. Henley, M. Dexter, L. Jabstrzebski and A. M. Hoff, Appl. Phys. Lett. 63 , 3043 (1993)
17. M. L. Polignano, D. Caputo, G. Pavia, F. Zanderigo, Solid-State Phenomena 64, 413-420(1998)
18. K. Wünstel and P. Wagner, Solid State Communications 40, 797 (1981)
19. S. D. Brotherton, P. Bradley and A. Gill, J. Appl. Phys. 57,1941 (1985).
20. E. Colelli, A. Galbiati, D. Caputo, M. L. Polignano, V. Soncini, G. Salvà, in Proc. of the 8th International Symposium on Plasma- and Process-Induced Damage, 2003, K. Eriguchi, S. Krishnan, and T. Hook, eds, p. 81, IEEE, Piscataway, NJ (2003)