Metal contamination reduction in the evolution of ion implantation technology

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 2000, Pages 686-690

  Polignano, M L ^a   Caputo, D ^a   Giussani, A ^a   Soncini, V ^a   Di Toma, G ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSIDE CONTACT; CONTAMINATION REDUCTION; ENERGY REDUCTION; IMPLANTATION ENERGIES; IMPLANTATION PROCESS; IMPLANTATION TECHNOLOGY; IMPLANTED WAFERS; IRON CONTAMINATION; METAL CONTAMINATION; SILICON MATRIX; SURFACE PHOTOVOLTAGES; WAFER SUPPORT;

CONTAMINATION; ION IMPLANTATION; METALS; SILICON WAFERS;

POLLUTION DETECTION;

EID: 78649873485     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2000.924246     Document Type: Conference Paper

References (10)

1. M, L. Polignano, C. Bresolin, F. Cazzaniga, A. Sabbadini and G. Queirolo, "Investigation of metal contamination by photocurrent measurements: validation and application to ion implantation processes", in Optical Characterization Techniques for High-Performance Microelectronic Device Maujacturing II, J. K. Lowell, R. T. Chen, J. P. Mathur. eds., Proc. SPIE Vol. 263S, pp. 14-26, 1995
2. M. L. Polignano, F. Cazzaniga. A. Sabbadini, F. Zanderigo, F. Priolo, "Metal Contamination Monitoring and Gettering", Mat. Sci. in Semiconductor Processing Vol. 1, pp. 119-130, October 1998
3. G. Zoth and W. Bergholz, "A fast, preparation-free method to detect iron in silicon", J. Appl. Phys. Vol. 67, pp. 6764-6771, June 1990
4. V. Lehmann and H. Foil, "Minority carrier diffusion length mapping in silicon wafers using a silicon-electrolyte contact", J. Electrockem. Soc. Vol. 135, pp. 2831-2835, November 1988
5. A. M. Goodman, "A method for the measurement of short minority carrier diffusion lengths in semiconductors", J. Appl. Phys. Vol. 32, pp. 2550-2552, December 1961
6. J. Lagowski, A. M. Kontkiewicz, L. Jastrzebski, and P. Edelman, "Method for the measurement of long minority carrier diffusion lengths exceeding wafer thickness", Appl. Phys. Lett. Vol. 63, 2902-2904, November 1993
7. E. Yablonovitch, D. L. Allara, C. C. Chang, T. Gmitter and T. B. Bright, "Unusually low surface recombination velocity son silicon and germanium surfaces", Phys. Rev. Letters Vol. 57, 249-252, July 1986
8. M. L. Polignano, E. Bellandi, D. Lodi, F. Pipia, A. Sabbadini, F. Zanderigo, G. Queirolo and F. Priolo, "Quantitative evaluation of bulk-diffused metal contamination by lifetime techniques", Mat. Sci. Eng. B, Vol 55, 21-33, August 1998
9. M. L. Polignano, D. Caputo, G. Pavia, F. Zanderigo, "Analysis of non-uniform contamination profiles by lifetime data", Solid-State Phenomena Vol 63-64, 413-420 (1998)
10. J. P Biersack and L G. Haggmark, "A Monte Carlo computer program for the transport of energetic ions in amorphous targets", Nuclear Instruments and Methods Vol 174, 257-269, 1980