Recent developments in silicon optoelectronic devices

2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings

Volumn 1, Issue , 2002, Pages 285-292

  Wong, Hei ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED OPTOELECTRONICS; MICROELECTRONICS; POROUS SILICON;

MULTI-MEDIA COMMUNICATIONS; OPTOELECTRONIC APPLICATIONS; OPTOELECTRONICS INTEGRATED CIRCUIT; RAPID GROWTH; SI-BASED MATERIALS; SILICON OPTOELECTRONICS; SILICON-BASED; TECHNOLOGICAL ASPECTS;

SILICON;

EID: 5544288411     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MIEL.2002.1003194     Document Type: Conference Paper

References (44)

1. M. Kawachi, "Silica waveguides on silicon and their application to integrated components," Opt. Quantum Electron., vol. 22, pp. 391-416, 1990.
2. S. Valette, J. P. Jadot, P. Gidon, S. Renard, A. Fournier, A. M. Grouillet, H. Denis, P. Philippe, and E. Desgranges, "Si-based integrated optics technologies," Solid State Technol., vol. 32, no. 2, pp. 69-75, 1989.
3. A. Himeno, K. Kato, and T. Miya, "Silica-based planar lightwave circuits," IEEE J Selected Topics Quantum Electron., Vol. 4, pp.913-924, 1998.
4. H. Hoffmann, P. Kopka, and E. Voges, "Low-loss fibermatched low-temperature PECVD waveguides with small-core dimension for optical communication systems," IEEE Photon. Technol. Lett., vol. 9, pp. 1238-1240, 1997.
5. K. Beniaissa, A. Nathan, S. T. Chu, and W. Huang, "IC compatible optical coupling techniques for integration of arrow with photodetector," J. Lightwave Technol., vol. 16, pp.1423-1432, 1998.
6. H. Toba, K. Oda, K. Nakanishi, N. Shibata, K. Nosu, N. Takato, and M. Fukuda, "A 100-ch optical WDM transmission/distribution at 622 Mbits/s over 50 km," J. Lightwave Technol., vol. 8, pp. 1396-1401, 1990.
7. B. H. Verbeek, C. H. Henry, N. A. Olsson, K. J. Orlowsky, R. F. Kazarinov, and B. H. Johnson, "Integrated four-channel Mach-Zehnder multi/demultiplexer fabricated with phosphorous doped SiO2 waveguides on Si," J. Lightwave Technol., vol.6, pp. 1011-1015, 1988.
8. M. K. Smit and C. van Dam, "PHASAR-based WDMdevices: Principles, design and applications," IEEE J. Select. Topics Quantum Electron., vol. 2, pp. 236-250, 1996.
9. M. C. Larson, J. S. Harris Jr., Broadly Tunable Resonant-Cavity Light-Emitting Diode," IEEE Photon. Technol. Lett., 1995, vol.7, pp.1267-1269.
10. L. T. Canham, "Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers," Appl. Phys. Lett. vol.57, p.1046-1048, 1990.
11. V.A. Gritsenko, K.S. Zhuravlev, A.D. Milov, H. Wong, R.W.M. Kwok, J.B. Xu, "Silicon dots/clusters in silicon nitride: photoluminescence and electron spin resonance" Thin Solid Films, vol.353, pp.20-24, 1999.
12. H. Wong and V. A. Gritsenko, "Defects in Silicon Oxynitride Gate Dielectric," Microelectron. Reliab. vol.42, No.5, 2002, in press.
13. V. A. Gritsenko, Y. G. Shavalgin, P. A. Pundur, H. Wong, and W. M. Lau, "Catholuminescence and photoluminescence of amorphous silicon oxynitride," Microelectron. Reliab. vol.39, pp.715-718, 1999.
14. A. J. Kenyon, P. F. Trwoga, C. W. Pitt, G. Rehm, "The origin of photoluminiscence from films of silicon-rich silica," J. Appl. Phys. Vol.79, pp.9291-9302, 1996.
15. P. Mutti, G. Ghislotti, S. Bertoni, L. Bonoldi, G. F. Cerofoloni, L. Meda, E. Grilli and M. Guzzi, "Room-temperature visible luminiscence from silicon nanocrystals in silicon implanted SiO2 layers," Appl. Phys. Lett. Vol.66, pp.851-853, 1995.
16. J. Piqueras, B. Méndez, R. Plugaru, G. Craciun, J. A. García, A. Remón. Cathodoluminescence from nano-crystalline silicon films and porous silicon. Appl. Phys. Lett. Vol.68, pp.329-331, 1999.
17. G. D. Sanders and Y.-C. Chang, "Theory of optical properties of quantum wires in porous silicon," Phys. Rev. B, vol. 45, pp.9202-9213, 1992.
18. Z. H. Lu, D. J. Lockwood, J. M. Baribeau, "Quantum confinement and light emission in SiO2/Si superlattices," Nature, vol 378, 16 November 1995.
19. S. Ossicini, "Optical properties of confined Si structures," Phys. Stat. Sol. (a), vol.170, p.377, 1998.
20. M. L. Brongersma, A. Polman, K. S. Min, E. Boer, T. Tambo, H.A. Atwater, "Tunning the emission wavelength of Si nanocrystals in SiO2 by oxidation," Appl. Phys. Lett., vol 72, pp. 2577-2579, 1998.
21. T. Shimizu-Iwayama, T. Yoichi, K. Atsushi, T. Motonori, N. Setsuo, S. Kazuo, "Visible photoluminiscence from nanocrystal formed in silicon dioxide by ion implantation and thermal processing," Thin Solid Films, vol.276, pp. 104-107, 1996.
22. R. M. de Ridder, K. Worhoff, A. Driessen, P. V. Lambeck, and H. Albers, Silicon Oxynitride Planar Waveguiding Structures for Application in Optical Communication," IEEE J Selected Topics Quantum Electron., Vol.4, pp.930-937, 1998.
23. A. Driessen, J. W. M. Hoekstra, F. C. Blom, F. Horst, G.J. M. Krijnen, J.B. P. Van Schoot, P. V. Lambeck, and Th. J. A. Popma, "Evaluation of polymer based third order nonlinear integrated optics devices device," Opt. Mater., vol.9, pp. 329-333, 1998.
24. T. S. Iwayama, D. E. Hole, I. W. Boyd, "Characteristic photoluminescence band in Si+-implanted SiO2 grown on Si wafer," Microelectron. Reliab., vol.40, pp.849-854, 2000.
25. S. Charvet, R. Madelon, R. Rizk, "Dielectric and photoluminescence properties of silicon nanoparticles embedded in a silica matrix," Microelectron. Reliab., vol.40, pp.855-858, 2000.
26. M. Lopez, B. Garddo, C. Bonafos, O. Gonzdlez-Varona, A. Perez-Rodriguez, J. Montserrat, J. R. Morante, "Effect of implantation and annealing conditions on the photoluminescence emission of Si nanocrystals ion beam synthesised in SiO2," Microelectron. Reliab., vol.40, pp. 859-862, 2000.
27. B. De Salvo, P. Luthereau, T. Baron, G. Ghibaudo, F. Martin, D. Fraboulet, G. Reimbold, J. Gautier, "Transport process in thin SiO2 films with an embedded 2-D array of Si nanocrystals," Microelectron. Reliab., vol.40, pp.863-866, 2000.
28. O. Gonzalez-Varona, C. Bonafos, M. Lopez, B. Garrido, A. Perez-Rodriguez, J. R. Morante, J. Montserrat, R. Rodriguez, "Synthesis of luminescent particles in SiO2 films by sequential Si and C ion implantation," Microelectron. Reliab. vol.40, pp.885-888, 2000.
29. A. Misiuk, A. Iller, L. Rdohle, M. Lukaszewicz, A. Kudla, "Photoluminescence from pressure-annealed silicon dioxide and nitride films." Microelectron Reliab., vol.40, pp.881-884, 2000.
30. H. Wong, M. C. Poon, Y. Gao and T. C.W. Kwok, "Preparation of Thin Dielectric Film for Nonvolatile Memory by Thermal Oxidation of Si-Rich LPCVD Nitride" J. Electrochem. Soc., vol.148, pp.G275-278, 2001.
31. P. G. Han, M. C. Poon, P. K. Ko, J. K. O. Sin, M. Wong and H. Wong, "Study of luminescent porous polycrystalline silicon thin films," J. Vac. Sci. Technol. B, vol.14, pp.824-827, 1996.
32. M. A. Hory, R. Herino, M. Ligeon, F. Muller, F. Gaspard, I. Mihalcescu, J. C. Vial, "Fourier transform IR monitoring of porous siicon passivation during post-treatments such as anodic oxidation and contact with organic solvents," Thin Solid Films, vol.255, pp.200-203, 1995.
33. N. H. Zoubir, M. Vergnat, T. Delatour, A. Burneau, P. D. Donato, O. Barres, "Natural oxidation of annealed chemically etched porous silicon," Thin Solid Films, vol.255, pp.228-230, 1995.
34. Y. Xiao, M. J. Heben, J. M. McCullough, Y. S. Tsuo, J. I. Pankove and S. K. Deb, "Enhancement and stabilization of porous silicon photo-luminescence by oxygen in corporation with a remote-plasma treatment," Appl. Phys. Lett., vol.62, pp.1152-1154, 1993.
35. R. P. Vasquez, R. W. Fathauer, T. George, A. Ksendzov, and T. L. Lin, "Electronic structure of light-emitting porous silicon," Appl. Phys. Lett., vol.60, pp.1004-1006, 1992.
36. P. Joubert, A. Abouliatim, P. Guyader, D. Briand, B. Lambert, and M. Guendouz, "Growth and luminescence of n-type porous polycrystalline silicon," Thin Solid Films, vol.255, pp.96-98, 1995.
37. P. M. Fauchet, "Progress Toward Nanoscale Silicon Light Emitters," IEEE J Selected Topics Quantum Electron., Vol.4, pp.1020-1028, 1998.
38. H. Wong, P. G. Han, M. C. Poon and Y. Gao, "Investigation of the surface silica layer on porous poly-Si thin films," Microelectron. Reliab., vol. 41, pp.179-184, 2001.
39. P. G. Han, H. Wong, A. H. P. Chan, and M. C. Poon, "A novel approach for fabricating light-emitting porous polysilicon films," Microelectron. Reliab., vol.42, 2002, in press.
40. P. N. Saeta and A. G. Gallagher, "Visible luminescence from single crystal-silicon quantum wells," J. Appl. Phys., vol.77, pp.4639-4642, 1995.
41. L. Skuja, T. Suzuki, and K. Tanimura, "Site-selective laserspectroscopy studies of intrinsic 1.9-eV luminescence center in glassy SiO2," Phys. Rev. B, vol.52, pp.15208-15216, 1995.
42. H. F. Arrand, T. M. Benson, P. Sewell, A. Loni, R. J. Bozeat, R. Arens-Fischer, M. Kruger, M. Thonissen, and H. Luth, "The application of porous silicon to optical waveguiding technology," IEEE J Selected Topics Quantum Electron., Vol. 4, pp. 975-982, 1998.
43. J. Linnros and N. Lalic, "High quantum efficiency for a porous silicon light emitting diode pulsed operation," Appl. Phys. Lett. Vol.66, pp.3048-3050, 1995.
44. L. Tsybeskov, J.V. Vandyshev and P. M. Fauchet, "Blue emission in porous silicon: oxygen-related photoluminescence," Phys. Rev. B, vol.49, pp.7821-7824, 1994.