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Volumn 104, Issue 8, 2008, Pages

Dependence of the mobility on charge carrier density and electric field in poly(3-hexylthiophene) based thin film transistors: Effect of the molecular weight

Author keywords

[No Author keywords available]

Indexed keywords

ABS RESINS; CHARGE CARRIERS; CHARGE DENSITY; ELECTRIC FIELD EFFECTS; ELECTRIC FIELD MEASUREMENT; ELECTRIC FIELDS; FIELD EFFECT TRANSISTORS; MOLECULAR WEIGHT; THICK FILMS; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS;

EID: 55249126617     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3003526     Document Type: Article
Times cited : (39)

References (30)
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    • (2003) Effect of Thermal Cycling on Performance of poly(3-hexyl)thiophene Transistors , vol.771 , pp. 1035
    • Mattis, B.1    Chang, P.2    Subramanian, V.3
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  • 15
    • 55249112883 scopus 로고    scopus 로고
    • Equation represents an approximated relationshibetween the width of the Gaussian DOS and the exponent β, which is valid at T=300 K, low electric field regime, and /kT≥2. In this regime β increases monotonically with
    • Equation represents an approximated relationship between the width of the Gaussian DOS and the exponent β, which is valid at T=300 K, low electric field regime, and /kT≥2. In this regime β increases monotonically with.
  • 16
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  • 26
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    • The maximum value of the density of charge carriers can be determined from Eq. putting x=0. We obtained about 2× 1026 carriers/ m3 at VG =30 V. This is quite high density, approaching the total DOS (Nt), usually reported to be in the range of 1026 - 1027 m-3 (Refs.). This occurs because Eq. does not take into account the enhancement of the Einstein relation (the ratio between diffusion and mobility of carriers), which occurs in the high density regime. It has been shown that by using the correct Einstein relation for a Gaussian DOS, the actual charge profile n (x) is broader and the maximum value (at x=0) is lower than the one obtained from Eq., preventing the density of carriers to exceed the DOS (Ref.).
    • The maximum value of the density of charge carriers can be determined from Eq. putting x=0. We obtained about 2× 1026 carriers/ m3 at VG =30 V. This is quite high density, approaching the total DOS (Nt), usually reported to be in the range of 1026-1027 m-3 (Refs.). This occurs because Eq. does not take into account the enhancement of the Einstein relation (the ratio between diffusion and mobility of carriers), which occurs in the high density regime. It has been shown that by using the correct Einstein relation for a Gaussian DOS, the actual charge profile n (x) is broader and the maximum value (at x=0) is lower than the one obtained from Eq., preventing the density of carriers to exceed the DOS (Ref.).
  • 27
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    • (2006) Phys. Rev. B , vol.74 , pp. 235202
    • Preezant, Y.1    Tessler, N.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.