The Pd/TiO2/n-LTPS thin-film Schottky diode on glass substrate for hydrogen sensing applications

IEEE Electron Device Letters

Volumn 29, Issue 11, 2008, Pages 1232-1235

  Chou, Tse Heng ^a   Fang, Yean Kuen ^a   Chiang, Yen Ting ^a   Lin, Kung Cheng ^a   Lin, Cheng I ^a   Kao, Chyuanur ^b   Lin, Hsiao Yi ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHANG GUNG UNIVERSITY   (Taiwan)

^c TPO Displays Corp   (Taiwan)

Author keywords

Amorphous silicon (a Si); Excimer laser annealing (ELA); Low temperature polysilicon (LTPS); MIS; Palladium

Indexed keywords

ADMINISTRATIVE DATA PROCESSING; AMORPHOUS SILICON; ANNEALING; CHEMICAL SENSORS; CONCENTRATION (PROCESS); DIODES; EXCIMER LASERS; GAS LASERS; GASES; GLASS; HYDROGEN; NONMETALS; PALLADIUM; POLYSILICON; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SENSORS; SILICON; SUBSTRATES; SWITCHING CIRCUITS; THICK FILMS; THIN FILM DEVICES;

EXCIMER; EXCIMER LASER ANNEALING (ELA); FAST RESPONSE TIMES; FUTURE DEVELOPMENTS; GLASS SUBSTRATES; HYDROGEN GAS SENSORS; HYDROGEN GASSES; HYDROGEN SENSORS; LOW-TEMPERATURE POLYSILICON (LTPS); MIS; ROOM TEMPERATURES; SCHOTTKY DIODES; SENSING APPLICATIONS; SIGNAL RATIOS; V COMPOUNDS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 55249117459     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2005534     Document Type: Article

References (32)

1. J. Villatoro, A. Díez, J. L. Cruz, and M. V. Andrés, "In-line highly sensitive hydrogen sensor based on palladium-coated single-mode tapered fibers," IEEE Sensors J., vol. 3, no. 4, pp. 533-537, Aug. 2003.
2. M. Buric, K. P. Chen, M. Bhattarai, P. R. Swinehart, and M. Maklad, "Active fiber Bragg grating hydrogen sensors for all-temperature operation," IEEE Photon. Technol. Lett., vol. 19, no. 5, pp. 255-257, Mar. 2007.
3. 0.7As Schottky diodes," Sens. Actuators B, Chem., vol. 117, no. 1, pp. 151-158, Sep. 2006.
4. M. Z. Atashbar, D. Banerji, and S. Singamaneni, "Room temperature hydrogen sensor based on palladium nanowires," IEEE Sensors J., vol. 5, no. 5, pp. 792-797, Oct. 2005.
5. Y. Xu, C. Chen, X. Wang, Y. Lei, X. Wang, L. Chen, and Q. Wang, "The influence of relative content of Ti and Zr on the electrochemical behavior of laves phase alloy," Int. J. Hydrogen Energy, vol. 32, no. 12, pp. 1716-1720, Aug. 2007.
6. I. Lundström, S. Shivaraman, C. Svensson, and L. Lundkvist, "A hydrogen-sensitive MOS field-effect transistor," Appl. Phys. Lett. vol. 26, no. 2, pp. 55-57, Jan. 1975.
7. K. Dobos, M. Armgarth, G. Zimmer, and I. Lundström, "The influence of different insulators on palladium-gate metal-insulator-semiconductor hydrogen sensors," IEEE Trans. Electron Devices, vol. ED-31, no. 4, pp. 508-510, Apr. 1984.
8. Y. K. Fang, S. B. Hwang, C. Y. Lin, and C. C. Lee, "Trench Pd/Si metal-oxide-semiconductor Schottky barrier diode for a high sensitivity hydrogen gas sensor," Appl. Phys. Lett., vol. 57, no. 25, pp. 2686-2688, Dec. 1990.
9. P. F. Ruths, S. Ashok, S. J. Fonash, and J. M. Ruths, "A study of Pd/Si MIS Schottky barrier diode hydrogen detector," IEEE Trans. Electron Devices, vol. ED-28, no. 9, pp. 1003-1009, Sep. 1981.
10. 0.48As Schottky diode-type hydrogen sensor," IEEE Electron Device Lett., vol. 27, no. 12, pp. 951-954, Dec. 2006.
11. 0:7As MOS hydrogen sensor," IEEE Electron Device Lett., vol. 24, no. 6, pp. 390-392, Jun. 2003.
12. W. C. Liu, H. J. Pan, H. I. Chen, K. W. Lin, S. Y. Cheng, W. C. Wang, and K. H. Yu, "Hydrogen-sensitive characteristics of a novel Pd/InP MOS Schottky diode hydrogen sensor," IEEE Trans. Electron Devices, vol. 48, no. 9, pp. 1938-1944, Sep. 2001.
13. W. T. Hsieh, Y. K. Fang, W. J. Lee, K.-H. Wu, J.-J. Ho, K.-H. Chen, and S. Y. Huang, "An a-SiGe:H phototransistor integrated with a Pd film on glass substrate for hydrogen monitoring," IEEE Trans. Electron Devices, vol. 47, no. 5, pp. 939-943, Sep. 2000.
14. S. Schiffman, D. Wyrick, R. Gutierrezosuna, and H. Nagle, "Effectiveness of an electronic nose for monitoring bacterial and fungal growth," in Electronic Noses and Olfaction 2000. Brighton, U.K.: Inst. Phys. Publ., 2000.
15. J. Grate, "Acoustic wave microsensor arrays for vapor sensing," Chem. Rev., vol. 100, no. 7, pp. 2627-2648, Jul. 2000.
16. N. Lewis, "Comparisons between mammalian and artificial olfaction based on arrays of carbon black-polymer composite vapor detectors," Acc. Chem. Res., vol. 37, no. 9, pp. 663-672, 2004.
17. I. H. Song, S. H. Kang, W. J. Nam, and M. K. Han, "A high-performance multichannel dual-gate poly-Si TFT fabricated by excimer laser irradiation on a floating a-Si thin film," IEEE Electron Device Lett., vol. 24, no. 9, pp. 580-582, Sep. 2003.
18. C. H. Kim, I. H. Song, W. J. Nam, and M. K. Han, "A poly-Si TFT fabricated by excimer laser recrystallization on floating active structure," IEEE Electron Device Lett., vol. 23, no. 6, pp. 315-317, Jun. 2002.
19. W. K. Kwak, B. R. Cho, S. Y. Yoon, S. J. Park, and J. Jang, "A high performance thin-film transistor using a low temperature poly-Si by silicide mediated crystallization," IEEE Electron Device Lett., vol. 21, no. 3, pp. 107-109, Mar. 2000.
20. J. H. Lee, J. H. Kim, and M. K. Han, "A new a-Si:H TFT pixel circuit compensating the threshold voltage shift of a-Si:H TFT and OLED for active matrix OLED," IEEE Electron Device Lett., vol. 26, no. 12, pp. 897-899, Dec. 2005.
21. J. H. Lee,W. Jin Nam, S. H. Jung, and M. K. Han, "A new current scaling pixel circuit for AMOLED," IEEE Electron Device Lett., vol. 25, no. 5, pp. 280-282, May 2004.
22. T. Sameshima, S. Usui, and M. Sekiya, "XeCl excimer laser annealing used in the fabrication of Poly-Si TFTs," IEEE Electron Device Lett. vol. EDL-5, no. 5, pp. 276-278, May 1986.
23. J. C. Liao, Y. K. Fang, C. H. Kao, and C. Y. Cheng, "Dynamic negative bias temperature instability (NBTI) of low-temperature polycrystalline silicon (LTPS) thin-film transistors," IEEE Electron Device Lett. vol. 29, no. 5, pp. 477-479, May 2008.
24. 2 thin films for dyes photodegradation," Thin Solid Films, vol. 515, no. 16, pp. 6294-6297, Jun. 2007.
25. 2: A novel semiconductor-oxide gas sensor," Mater. Lett., vol. 34, no. 1/2, pp. 99-102, Feb. 1998.
26. E. Comini, G. Faglia, G. Sberveglieri, Z. Pan, and Z. L. Wang, "Stable and highly sensitive gas sensors based on semiconducting oxide nanobelts," Appl. Phys. Lett., vol. 81, no. 10, pp. 1869-1871, Sep. 2002.
27. 2 interfaces," J. Appl. Phys., vol. 82, no. 6, pp. 3143-3146, Sep. 1997.
28. W. P. Kang and Y. Gürbüz, "Comparison and analysis of Pd and Pt GaAs Schottky diodes for hydrogen detection," J. Appl. Phys., vol. 75, no. 12, pp. 8175-8181, Jun. 1994.
29. M. Johansson, I. Lundström, and L. G. Ekedahl, "Bridging the pressure gap for palladium metal-insulator-semiconductor hydrogen sensors in oxygen containing environments," J. Appl. Phys., vol. 84, no. 1, pp. 44-51, Jul. 1998.
30. 3 interface," IEEE Sensors J., vol. 6, no. 5, pp. 1250-1255, Oct. 2006.
31. C. W. Hung, H. C. Chang, Y. Y. Tsai, P. H. Lai, S. I. Fu, T. P. Chen, H. I. Chen, and W. C. Liu, "Study of a new field-effect resistive hydrogen sensor based on a Pd/oxide/AlGaAs transistor," IEEE Trans. Electron Devices, vol. 52, no. 5, pp. 1224-1231, May 2007.
32. 0.51 P MOS Schottky diode hydrogen sensor," IEEE Electron Device Lett., vol. 23, no. 11, pp. 640-642, Nov. 2002.